发明授权
- 专利标题： Plasma treatment method utilizing an amplitude-modulated high frequency power
- 专利标题（中）： 使用调幅高频功率的等离子体处理方法
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申请号： US94451申请日： 1998-06-10
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公开(公告)号： US6106737A公开(公告)日： 2000-08-22
- 发明人: Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- 申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-106045 19940420; JPX6-113587 19940428; JPX6-133638 19940524; JPX6-142409 19940601
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/448 ; C23C16/455 ; C23C16/509 ; C23C16/517 ; H01J37/32
摘要：
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
公开/授权文献
- US5381497A Fiber optic connector with vented ferrule holder 公开/授权日：1995-01-10
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