发明授权
US06444530B1 Process for fabricating an integrated circuit with a self-aligned contact
有权
用于制造具有自对准接触的集成电路的工艺
- 专利标题： Process for fabricating an integrated circuit with a self-aligned contact
- 专利标题（中）： 用于制造具有自对准接触的集成电路的工艺
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申请号： US09318429申请日： 1999-05-25
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公开(公告)号： US06444530B1公开(公告)日： 2002-09-03
- 发明人: Hung-Sheng Chen , Unsoon Kim , Yu Sun , Chi Chang , Mark Ramsbey , Mark Randolph , Tatsuya Kajita , Angela Hui , Fei Wang , Mark Chang
- 申请人： Hung-Sheng Chen , Unsoon Kim , Yu Sun , Chi Chang , Mark Ramsbey , Mark Randolph , Tatsuya Kajita , Angela Hui , Fei Wang , Mark Chang
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A method of forming a contact in a flash memory device utilizes a local interconnect process technique. The local interconnect process technique allows the contact to butt against or overlap a stacked gate associated with the memory cell. The contact can include tungsten. The stacked gate is covered by a barrier layer which also covers the insulative spacers.
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