发明授权
- 专利标题: Methods and apparatus for controlled-angle wafer immersion
- 专利标题(中): 受控角晶片浸没的方法和装置
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申请号: US09872341申请日: 2001-05-31
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公开(公告)号: US06551487B1公开(公告)日: 2003-04-22
- 发明人: Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind
- 申请人: Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind
- 主分类号: C25D500
- IPC分类号: C25D500
摘要:
The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
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