公开(公告)号：US20200236869A1

公开(公告)日：2020-07-30

申请号：US16634940

申请日：2019-01-31

Applicant: Gary Lind Johnson ,  Kirk David Johnson

Inventor： Gary Lind Johnson ,  Kirk David Johnson

IPC: A01G9/08 ,  A01G9/02 ,  A01G31/04 ,  A01G25/16 ,  B65G43/08 ,  B65G35/06 ,  B65G9/00 ,  A01G25/09 ,  A01G27/00 ,  A01G9/24 ,  A01G7/04 ,  A01G9/20 ,  A01G7/02 ,  A01G9/18 ,  A01G9/14

Abstract: A vertical pole (2) holds plant growing containers (3, 50, 54), at multiple heights. Some containers may be mounted at a given height (H1-H9) in a circular array around the pole. Each container may occupy a V-shaped region about the pole in a top view. The pole may be moveable by a conveyor system (4, 5). The pole may have a fluid reservoir (30), and a fluid distribution system (31-35) extending from the fluid reservoir to plant growing containers at different vertical locations on the pole. Each plant growing container may integrate a soil containment portion (51), a bottom drain portion (61) that collects fluid draining through the soil, and a bypass drain portion (64, 70, 72, 75, 79), that interconnects with higher and lower like containers on the pole and bypasses the soil in the containers for rinsing the soils individually.

公开(公告)号：US20200154646A1

公开(公告)日：2020-05-21

申请号：US16634938

申请日：2018-09-28

Applicant: Gary Lind Johnson ,  Kirk David Johnson

Inventor： Gary Lind Johnson ,  Kirk David Johnson

IPC: A01G9/08 ,  A01G25/16 ,  B65G43/08 ,  B65G35/06 ,  B65G9/00 ,  A01G25/09 ,  A01G27/00 ,  A01G9/24 ,  A01G7/04 ,  A01G9/20 ,  A01G7/02 ,  A01G9/18 ,  A01G9/14 ,  A01G9/02 ,  A01G31/04

Abstract: A conveyor system (4, 5) moves vertical poles (2) in an agricultural facility between a growing area (20) and a workstation (W). Each pole carries plant growing containers (3) at multiple levels (H1-H9). An irrigation reservoir (30) may be mounted atop each pole. Irrigation lines (31-33) from the reservoir may be individually metered (35) at each level to compensate for differing water pressure with height. Sensors (40) in the reservoir and at each level of the poles may provide a controller (36) with data input. The controller may impose different growing conditions in different areas of the facility, including vertically different grow areas (20A, 20B), and controls pole movements and locations selectively to provide a sequence of poles at the workstation ready to harvest on a demand schedule. The workstation may have multiple heights (W1, W2, W3) for tall poles that increase plant density per facility footprint.

公开(公告)号：US08753447B2

公开(公告)日：2014-06-17

申请号：US12482042

申请日：2009-06-10

Applicant: Gary Lind ,  John Floyd Ostrowski

Inventor： Gary Lind ,  John Floyd Ostrowski

IPC: C23C16/00

CPC classification number: C23C16/4586 ,  C23C16/4401 ,  C23C16/4581

Abstract: A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference.

Abstract translation: 在半导体处理装置中使用的隔热罩包括具有低热导率的高性能绝缘体，例如低于在设备的操作中使用的宽范围的温度范围内的静止空气的热导率。 例如，绝缘体的导热率可以在约0℃至约600℃或更高的温度范围内在约0.004W / m·h至约0.4W / m·h的范围内。 与没有屏蔽的达到相同的期望温度所需的加热器功率消耗的情况相比，高性能隔热罩的部署将加热器所需的功率消耗降低多达20％以达到所需的加工温度。 此外，热屏蔽显着地减少了装置室内部件上气体夹带的成分不希望的沉积量，特别是低于或超过隔热层的沉积量多达90％，因为温度下降高达十次 的差异。

公开(公告)号：US20130000848A1

公开(公告)日：2013-01-03

申请号：US13462096

申请日：2012-05-02

Applicant: Panya Wongsenakhum ,  Gary Lind ,  Prashanth Kothnur

Inventor： Panya Wongsenakhum ,  Gary Lind ,  Prashanth Kothnur

IPC: B05B1/18 ,  B05C11/00

CPC classification number: H01L21/68735

Abstract: A substrate processing system includes a pedestal including a substrate supporting surface having a diameter that is greater than a diameter of a substrate to be processed by the substrate processing system. A first surface extends a first distance above the substrate supporting surface in a direction substantially perpendicular to the substrate supporting surface. The first distance is greater than or equal to one-half of a thickness of the substrate. A gap is defined between the first surface and an outer diameter of the substrate. A second surface extends a second distance from the first surface at an angle with respect to the first surface. The angle is greater than zero and less than ninety degrees. A third surface extends from the second surface and is substantially parallel to the substrate supporting surface. An etchant source directs etchant onto the substrate to etch the substrate.

Abstract translation: 衬底处理系统包括：基座，其包括基板支撑表面，该基板支撑表面的直径大于由基板处理系统处理的基板的直径。 第一表面沿基本上垂直于基板支撑表面的方向在基板支撑表面上方延伸第一距离。 第一距离大于或等于衬底厚度的一半。 在衬底的第一表面和外径之间限定间隙。 第二表面相对于第一表面以一定角度从第一表面延伸第二距离。 角度大于零，小于九十度。 第三表面从第二表面延伸并且基本上平行于基底支撑表面。 蚀刻剂源将蚀刻剂引导到衬底上以蚀刻衬底。

公开(公告)号：US06883733B1

公开(公告)日：2005-04-26

申请号：US10113339

申请日：2002-03-28

Applicant: Gary Lind

Inventor： Gary Lind

IPC: B05B7/06 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/45574 ,  C23C16/45565 ,  C23C16/45576

Abstract: This invention provides a showerhead and method for allowing reaction gases to immediately mix upon release from gas outlets and minimize deposits of unwanted contaminants on the tip of a gas outlet and faceplate of the showerhead. A post having a central opening extends into the faceplate for emitting a first gas and is directly and circumferentially surrounded by an annular opening for emitting a second gas. The post may be recessed from, flush with or extend a distance past a frontal surface of the faceplate. A plurality of apertures, for emitting the second gas, may circumferentially surround the annular opening. The annular opening releases the second gas at a pressure and velocity sufficient to intermix with first gas released from the post while simultaneously forcing any unreacted gas and gaseous mixtures away from the tip of the post and frontal surface of the faceplate, thereby avoiding depositing contaminants thereon.

Abstract translation: 本发明提供了一种喷头和方法，用于允许反应气体在从气体出口释放时立即混合，并使喷淋头的气体出口和面板的尖端上的不想要的污染物的沉积最小化。 具有中心开口的柱体延伸到面板中用于发射第一气体，并且被用于发射第二气体的环形开口直接并周向地包围。 柱可以凹进，与面板的前表面齐平或延伸一段距离。 用于发射第二气体的多个孔可周向地包围环形开口。 环形开口以足够的压力和速度释放第二气体，以便与从柱释放的第一气体混合，同时迫使任何未反应的气体和气体混合物离开面板的柱和前表面的尖端，从而避免在其上沉积污染物 。

公开(公告)号：US11369063B2

公开(公告)日：2022-06-28

申请号：US16634938

申请日：2018-09-28

Applicant: Gary Lind Johnson ,  Kirk David Johnson

Inventor： Gary Lind Johnson ,  Kirk David Johnson

IPC: A01G9/02 ,  A01G9/14 ,  A01G9/24 ,  A01G9/08 ,  A01G9/18 ,  A01G7/02 ,  A01G9/20 ,  A01G7/04 ,  A01G27/00 ,  A01G25/09 ,  B65G35/06 ,  B65G43/08 ,  A01G25/16 ,  A01G31/04 ,  B65G9/00

Abstract: A conveyor system (4, 5) moves vertical poles (2) in an agricultural facility between a growing area (20) and a workstation (W). Each pole carries plant growing containers (3) at multiple levels (H1-H9). An irrigation reservoir (30) may be mounted atop each pole. Irrigation lines (31-33) from the reservoir may be individually metered (35) at each level to compensate for differing water pressure with height. Sensors (40) in the reservoir and at each level of the poles may provide a controller (36) with data input. The controller may impose different growing conditions in different areas of the facility, including vertically different grow areas (20A, 20B), and controls pole movements and locations selectively to provide a sequence of poles at the workstation ready to harvest on a demand schedule. The workstation may have multiple heights (W1, W2, W3) for tall poles that increase plant density per facility footprint.

公开(公告)号：US10136587B1

公开(公告)日：2018-11-27

申请号：US15893947

申请日：2018-02-12

Applicant: Gary Lind Johnson ,  Kirk David Johnson

Inventor： Gary Lind Johnson ,  Kirk David Johnson

IPC: A01G9/02 ,  A01G9/08 ,  A01G9/14 ,  A01G9/18 ,  A01G7/02 ,  A01G9/20 ,  A01G7/04 ,  A01G9/24 ,  A01G27/00 ,  A01G25/09 ,  B65G9/00 ,  B65G35/06 ,  B65G43/08 ,  A01G25/16

Abstract: A conveyor system (4, 5) moves vertical poles (2) in an agricultural facility between a growing area (20) and a workstation (W). Each pole carries plant growing containers (3) at multiple levels (H1-H9). An irrigation reservoir (30) may be mounted atop each pole. Irrigation lines (31-33) from the reservoir may be individually metered (35) at each level to compensate for differing water pressure with height. Sensors (40) in the reservoir and at each level of the poles may provide a controller (36) with data input. The controller may impose different growing conditions in different areas of the facility, including vertically different grow areas (20A, 20B), and controls pole movements and locations selectively to provide a sequence of poles at the workstation ready to harvest on a demand schedule. The workstation may have multiple heights (W1, W2, W3) for tall poles that increase plant density per facility footprint.

公开(公告)号：US06551487B1

公开(公告)日：2003-04-22

申请号：US09872341

申请日：2001-05-31

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

IPC: C25D500

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

公开(公告)号：US20100317197A1

公开(公告)日：2010-12-16

申请号：US12482042

申请日：2009-06-10

Applicant: Gary Lind ,  John Floyd Ostrowski

Inventor： Gary Lind ,  John Floyd Ostrowski

IPC: H01L21/30 ,  C23C16/44 ,  C23C14/34 ,  C23C16/513 ,  H05K13/00

CPC classification number: C23C16/4586 ,  C23C16/4401 ,  C23C16/4581

Abstract: A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference.

Abstract translation: 在半导体处理装置中使用的隔热罩包括具有低热导率的高性能绝缘体，例如低于在设备的操作中使用的宽范围的温度范围内的静止空气的热导率。 例如，绝缘体的导热率可以在约0℃至约600℃或更高的温度范围内在约0.004W / m·h至约0.4W / m·h的范围内。 与没有屏蔽的达到相同的期望温度所需的加热器功率消耗的情况相比，高性能隔热罩的部署将加热器所需的功率消耗降低多达20％以达到所需的加工温度。 此外，热屏蔽显着地减少了装置室内部件上气体夹带的成分不希望的沉积量，特别是低于或超过隔热层的沉积量多达90％，因为温度下降高达十次 的差异。

公开(公告)号：US07097410B1

公开(公告)日：2006-08-29

申请号：US10379858

申请日：2003-03-04

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

IPC: B65G47/90 ,  C25D5/00

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。