公开(公告)号：US07854828B2

公开(公告)日：2010-12-21

申请号：US11506054

申请日：2006-08-16

Applicant: Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

Inventor： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

IPC: C25D5/18 ,  C25D21/12

CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D17/002

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract translation: 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流，并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线，因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

公开(公告)号：US20100116672A1

公开(公告)日：2010-05-13

申请号：US12481503

申请日：2009-06-09

Applicant: Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

Inventor： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC: C25D5/00 ,  C25D17/10 ,  C25D21/12

CPC classification number: C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

公开(公告)号：US20100032303A1

公开(公告)日：2010-02-11

申请号：US11506054

申请日：2006-08-16

Applicant: Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

Inventor： Jonathan Reid ,  Seshasayee Varadarajan ,  Bryan Buckalew ,  Patrick Breiling ,  Glenn Ibarreta

IPC: C25D21/12 ,  C25D17/00 ,  C25D7/12 ,  C25D5/00

CPC classification number: C25D7/123 ,  C25D17/001 ,  C25D17/002

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract translation: 用于在晶片表面上电镀金属层的装置包括相对于晶片远程定位的第二阴极。 远程定位的第二阴极允许在整个电镀过程中调制晶片表面处的电流密度。 第二阴极从晶片的近边缘区域转移一部分电流，并且提高镀层的均匀性。 第二阴极的远程位置允许设置在电镀槽中的绝缘屏蔽形成晶片所经历的电流曲线，因此用作“虚拟第二阴极”。 第二阴极可以位于电镀容器的外部并与膜分离。

公开(公告)号：US07456102B1

公开(公告)日：2008-11-25

申请号：US11248860

申请日：2005-10-11

Applicant: Seshasayee Varadarajan ,  Jian Zhou

Inventor： Seshasayee Varadarajan ,  Jian Zhou

IPC: H01L21/44

CPC classification number: H05K3/422 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1669 ,  C23C18/31 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76868 ,  H01L21/76874 ,  H01L21/76879 ,  H05K2201/09563 ,  H05K2203/1476

Abstract: Disclosed is a procedure for bottom-up fill of electroless copper film in sub-micron integrated circuit features. By repeatedly placing an integrated circuit wafer in an electroless bath, a transient period of time of accelerated growth in the feature is repeated to achieve many small layers of deposition, each of which is thicker near the base of the feature. The net result is filing of the feature from the bottom-up fill without formation of voids. The electroless bath employed to form the continuous electroless copper film may include a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers.

Abstract translation: 公开了一种亚微米集成电路特征中无电解铜膜的自下而上填充的程序。 通过将集成电路晶片重复放置在无电镀浴中，重复特征中加速生长的瞬时时间段以实现许多小的沉积层，每个沉积层在特征的基部附近较厚。 最终的结果是从自下而上的填充填充特征，而不形成空隙。 用于形成连续无电镀铜膜的无电镀浴可以包括还原剂，络合剂，铜离子源，pH调节剂和任选的一种或多种表面活性剂和/或稳定剂。

公开(公告)号：US06964792B1

公开(公告)日：2005-11-15

申请号：US09927740

申请日：2001-08-10

Applicant: Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Seshasayee Varadarajan

Inventor： Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Seshasayee Varadarajan

IPC: B05C3/00 ,  B05D1/18 ,  C25D5/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/00

CPC classification number: C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008

Abstract: The present invention provides apparatus and methods for controlling flow dynamics of a plating fluid during a plating process. The invention achieves this fluid control through use of a diffuser membrane. Plating fluid is pumped through the membrane; the design and characteristics of the membrane provide a uniform flow pattern to the plating fluid exiting the membrane. Thus a work piece, upon which a metal or other conductive material is to be deposited, is exposed to a uniform flow of plating fluid.

Abstract translation: 本发明提供了一种用于在电镀过程中控制电镀液的流动动力学的装置和方法。 本发明通过使用扩散膜来实现该流体控制。 电镀液被泵送通过膜; 膜的设计和特性为离开膜的电镀液提供均匀的流动模式。 因此，要沉积金属或其他导电材料的工件暴露于电镀液体的均匀流动。

公开(公告)号：US06551487B1

公开(公告)日：2003-04-22

申请号：US09872341

申请日：2001-05-31

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

IPC: C25D500

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

公开(公告)号：US09109295B2

公开(公告)日：2015-08-18

申请号：US12577619

申请日：2009-10-12

Applicant: Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

Inventor： Jonathan D. Reid ,  Seshasayee Varadarajan ,  Steven T. Mayer

IPC: C25D17/00 ,  C25D21/18 ,  C25D3/38 ,  C25D21/02 ,  C25D21/14 ,  C25D7/12

CPC classification number: C25D17/00 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/02 ,  C25D21/14 ,  C25D21/18

Abstract: An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.

Abstract translation: 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。

公开(公告)号：US08475636B2

公开(公告)日：2013-07-02

申请号：US12481503

申请日：2009-06-09

Applicant: Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

Inventor： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC: C25D17/12 ,  C25D21/12

CPC classification number: C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract translation: 用于将金属层电镀到晶片表面上的装置包括位于晶片附近的离子电离离子可渗透元件和位于阳极和离子电离性可离子渗透元件之间的辅助阴极。 离子电阻性离子渗透元件用于调节晶片表面处的离子电流。 辅助阴极被配置成使来自阳极的电流分布成形。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US08362571B1

公开(公告)日：2013-01-29

申请号：US13016660

申请日：2011-01-28

Applicant: Qingguo Wu ,  James S. Sims ,  Mandyam Sriram ,  Seshasayee Varadarajan ,  Haiying Fu ,  Pramod Subramonium ,  Jon Henri ,  Sirish Reddy

Inventor： Qingguo Wu ,  James S. Sims ,  Mandyam Sriram ,  Seshasayee Varadarajan ,  Haiying Fu ,  Pramod Subramonium ,  Jon Henri ,  Sirish Reddy

IPC: H01L21/02

CPC classification number: H01L21/02115 ,  H01L21/02274 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/7843 ,  H01L29/7848

Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.

Abstract translation: 晶体管架构和制造工艺产生通道应变，而不会不利地影响晶体管制造工艺的效率，同时保持材料质量并增强所得晶体管的性能。 产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。 来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道，以在PMOS沟道中产生压缩应变。

公开(公告)号：US20110233056A1

公开(公告)日：2011-09-29

申请号：US13154224

申请日：2011-06-06

Applicant: Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

Inventor： Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

IPC: C25D17/06 ,  F16J15/02

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/02

Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。