公开(公告)号：US07033465B1

公开(公告)日：2006-04-25

申请号：US10309414

申请日：2002-12-02

Applicant: Evan E. Patton ,  Jonathan D. Reid ,  Jeffrey A. Hawkins ,  Dinesh S. Kalakkad

Inventor： Evan E. Patton ,  Jonathan D. Reid ,  Jeffrey A. Hawkins ,  Dinesh S. Kalakkad

IPC: C25D17/00

CPC classification number: C25D17/001 ,  C23C18/1605 ,  C23C18/1619 ,  C25D5/022

Abstract: Certain mechanisms of a plating apparatus address problems associated with interaction between plating solutions or other processing solutions and the components of the plating apparatus (such as the electrical contacts). For example, a circumferential spray skirt around the interface of a “cup” and “cone” in the plating apparatus protects these features during plating. A shield mechanism contacts the cup and/or cone at the periphery of their interface to provide a fluid resistant seal. In some cases, the cone includes an outer circumferential lip that engages a complementary surface of the cup for this purpose. Further, a mechanism is provided for raising and lowering the work piece with the cone in order to allow in situ rinsing of the work piece and/or regions of the cup.

Abstract translation: 电镀装置的某些机构解决与电镀液或其他处理溶液与电镀装置（例如电触头）的组分之间的相互作用相关的问题。 例如，电镀装置中的“杯”和“锥体”的界面周围的周向喷涂裙部在电镀期间保护这些特征。 屏蔽机构在其界面的周边处接触杯和/或锥体以提供耐流体密封。 在一些情况下，锥体包括外圆周唇缘，其与杯的互补表面接合以达到此目的。 此外，提供了用于使锥体升高和降低工件的机构，以便允许工件和/或杯的区域的原位冲洗。

公开(公告)号：US06551487B1

公开(公告)日：2003-04-22

申请号：US09872341

申请日：2001-05-31

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind

IPC: C25D500

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

公开(公告)号：US07097410B1

公开(公告)日：2006-08-29

申请号：US10379858

申请日：2003-03-04

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

IPC: B65G47/90 ,  C25D5/00

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

公开(公告)号：US07686927B1

公开(公告)日：2010-03-30

申请号：US11510048

申请日：2006-08-25

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  Seshasayee Varadarajan ,  David C. Smith ,  Evan E. Patton ,  Dinesh S. Kalakkad ,  Gary Lind ,  Richard S. Hill

IPC: C25D17/00

CPC classification number: H01L21/2885 ,  C25D17/001 ,  Y10S414/135 ,  Y10S414/136

Abstract: The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.

Abstract translation: 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。

公开(公告)号：US06755946B1

公开(公告)日：2004-06-29

申请号：US10010954

申请日：2001-11-30

Applicant: Evan E. Patton ,  Jonathan D. Reid ,  Jeffrey A. Hawkins ,  Dinesh S. Kalakkad ,  Steven T. Mayer

Inventor： Evan E. Patton ,  Jonathan D. Reid ,  Jeffrey A. Hawkins ,  Dinesh S. Kalakkad ,  Steven T. Mayer

IPC: C25D1706

CPC classification number: H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/12

Abstract: The present invention includes apparatus and methods for measuring impedance of a layer of deposited metal on a substrate and controlling deposition uniformity during electroplating. A first circuit delivers plating current to a metal layer on the substrate, and a second circuit, electrically isolated from the first, measures the impedance. Methods of the invention provide multi-point sheet resistance measurements before and during an electroplating process on a substrate. In a specific example, resistance is measured via a copper seed layer during electroplating.

Abstract translation: 本发明包括用于测量衬底上的沉积金属层的阻抗并控制电镀期间的沉积均匀性的装置和方法。 第一电路将电镀电流输送到衬底上的金属层，并且与第一电路电隔离的第二电路测量阻抗。 本发明的方法在基板上的电镀工艺之前和期间提供多点薄层电阻测量。 在具体实例中，电镀期间通过铜籽晶层测量电阻。