发明授权
- 专利标题: Planarizing method of semiconductor wafer and apparatus thereof
- 专利标题(中): 半导体晶片的平面化方法及其装置
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申请号: US09910904申请日: 2001-07-24
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公开(公告)号: US06777337B2公开(公告)日: 2004-08-17
- 发明人: Kan Yasui , Souichi Katagiri , Masayuki Nagasawa , Ui Yamaguchi , Yoshio Kawamura
- 申请人: Kan Yasui , Souichi Katagiri , Masayuki Nagasawa , Ui Yamaguchi , Yoshio Kawamura
- 优先权: JP2000-231389 20000727
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
In a production process of a semiconductor device, planarizing of a wafer surface pattern can be performed to attain high planarity, good uniformity in the removal amount and improved controllability. This process include a step of planarizing a semiconductor wafer, from which at least two different films have been exposed, by polishing with a grindstone and a dispersant-containing processing liquid.
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