发明授权
- 专利标题: Back-end metallisation process
- 专利标题(中): 后端金属化工艺
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申请号: US10113040申请日: 2002-04-01
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公开(公告)号: US06841189B2公开(公告)日: 2005-01-11
- 发明人: Eric Alexander Meulenkamp , Maria Jeanne Schroevers
- 申请人: Eric Alexander Meulenkamp , Maria Jeanne Schroevers
- 申请人地址: NL Eindhoven
- 专利权人: Koninklijke Philips Electronics N.V.
- 当前专利权人: Koninklijke Philips Electronics N.V.
- 当前专利权人地址: NL Eindhoven
- 代理商 Peter Zawilski
- 优先权: EP01201228 20010404
- 主分类号: C25D3/38
- IPC分类号: C25D3/38 ; C25D5/10 ; C25D5/34 ; C25D7/04 ; C25D7/12 ; H01L21/288 ; H01L21/768 ; H05K3/18 ; H05K3/38 ; H05K3/42 ; B05D5/12 ; B05D3/00 ; C25D5/02
摘要:
The invention provides for a back-end metallisation process in which a recess is filled with copper and which includes the step of forming a plating base on the surfaces of the recess for the subsequent galvanic deposition of the said copper, and wherein subsequent to the formation of the plating base, but prior to the galvanic deposition of the copper, a modifying agent is introduced to the recess and which serves to absorb in the surface regions not covered by the plating base and to thereby modify the surface to promote copper growth thereon so as to effectively repair the initial plating base before the copper plating fill commences.
公开/授权文献
- US20020144908A1 Back-end metallisation process 公开/授权日:2002-10-10
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