发明授权
- 专利标题： Nitride semiconductor device with reduced polarization fields
- 专利标题（中）： 具有减小的偏振场的氮化物半导体器件
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申请号： US09992192申请日： 2001-11-13
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公开(公告)号： US06849472B2公开(公告)日： 2005-02-01
- 发明人: Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
- 申请人： Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
- 申请人地址： US CA San Jose
- 专利权人： Lumileds Lighting U.S., LLC
- 当前专利权人： Lumileds Lighting U.S., LLC
- 当前专利权人地址： US CA San Jose
- 代理机构： Patent Law Group LLP
- 优先权： JP9-265311 19970930
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L31/18 ; H01L33/00 ; H01L33/06 ; H01L33/16 ; H01L33/18 ; H01L33/24 ; H01L33/32 ; H01S5/02 ; H01S5/32 ; H01S5/343 ; H01L21/00
摘要：
A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.
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