发明授权
- 专利标题: Semiconductor device and method for fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10323637申请日: 2002-12-20
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公开(公告)号: US06852612B2公开(公告)日: 2005-02-08
- 发明人: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- 申请人: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Nixon Peabody, LLP
- 代理商 Donald R. Studebaker
- 优先权: JP11-262134 19990916
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/338 ; H01L23/48 ; H01L29/20 ; H01L29/47 ; H01L29/812 ; H01L31/00 ; H01L33/32 ; H01L33/40 ; H01L21/28
摘要:
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
公开/授权文献
- US20030109088A1 Semiconductor device and method for fabricating the same 公开/授权日:2003-06-12