Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10323637Application Date: 2002-12-20
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Publication No.: US06852612B2Publication Date: 2005-02-08
- Inventor: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- Applicant: Katsunori Nishii , Yoshito Ikeda , Hiroyuki Masato , Kaoru Inoue
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Nixon Peabody, LLP
- Agent Donald R. Studebaker
- Priority: JP11-262134 19990916
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/338 ; H01L23/48 ; H01L29/20 ; H01L29/47 ; H01L29/812 ; H01L31/00 ; H01L33/32 ; H01L33/40 ; H01L21/28
Abstract:
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
Public/Granted literature
- US20030109088A1 Semiconductor device and method for fabricating the same Public/Granted day:2003-06-12
Information query
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