发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09967991申请日： 2001-10-02
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公开(公告)号： US06852651B2公开(公告)日： 2005-02-08
- 发明人: Yoshimi Shioya , Yuichiro Kotake , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
- 申请人： Yoshimi Shioya , Yuichiro Kotake , Tomomi Suzuki , Hiroshi Ikakura , Kazuo Maeda
- 申请人地址： JP JP
- 专利权人： Canon Sales Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人： Canon Sales Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人地址： JP JP
- 代理机构： Lorusso, Loud & Kelly
- 优先权： JP2000-384825 20001219; JP2001-197279 20010628
- 主分类号： C23C16/42
- IPC分类号： C23C16/42 ; C23C16/40 ; C23C16/509 ; H01L21/205 ; H01L21/312 ; H01L21/316 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L23/522 ; H01L21/469
摘要：
The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.