发明授权
- 专利标题: Radioactive implantable devices and methods and apparatuses for their production and use
- 专利标题(中): 放射性植入装置及其生产和使用的方法和装置
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申请号: US10217379申请日: 2002-08-13
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公开(公告)号: US06855103B2公开(公告)日: 2005-02-15
- 发明人: Ludger Dinkelborg , Klaus Urich
- 申请人: Ludger Dinkelborg , Klaus Urich
- 申请人地址: DE Berlin-Wedding
- 专利权人: Schering AG
- 当前专利权人: Schering AG
- 当前专利权人地址: DE Berlin-Wedding
- 代理机构: Millen, White, Zelano & Branigan, P.C.
- 主分类号: A61B17/00
- IPC分类号: A61B17/00 ; A61F2/00 ; A61K51/00 ; A61K51/12 ; A61M36/04 ; A61N5/10 ; C23G1/08 ; C25D5/10 ; C25D7/00 ; C25D7/04 ; C25D17/12 ; C25F3/00 ; A61N5/00
摘要:
A radiolabeled implantable device includes a base, a first layer including Cu and a radioactive isotope on the base, and a second layer including Sn on the first layer. Preferably, the base is formed of stainless steel and the radioactive isotope is a radioisotope of Re, such as 188Re or 186Re. Alternately, radioisotopes of the following elements may be used: Be, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Hf, Ta, W, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, At, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr. In addition, a process for producing a radiolabeled implantable device includes depositing a first layer including Cu and a radioactive isotope on a base, and depositing a second layer including Sn on the first layer. The process may further include removing Cr2O3 from the base and/or rinsing the base prior to depositing the first layer thereon.
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