发明授权
- 专利标题: Integrated low K dielectrics and etch stops
- 专利标题(中): 集成的低K电介质和蚀刻停止
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申请号: US10011368申请日: 2001-11-05
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公开(公告)号: US06858153B2公开(公告)日: 2005-02-22
- 发明人: Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
- 申请人: Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials Inc.
- 当前专利权人: Applied Materials Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser, Patterson & Sheridan
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; A01C15/02 ; A01C17/00 ; C23C16/40 ; H01L21/3065 ; H01L21/31 ; H01L21/311 ; H01L21/312 ; H01L21/316 ; H01L21/768 ; H01L23/522 ; C23F1/00
摘要:
A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
公开/授权文献
- US20020074309A1 Integrated low k dielectrics and etch stops 公开/授权日:2002-06-20