发明授权
- 专利标题： Multi-bit magnetic memory cells
- 专利标题（中）： 多位磁记忆体单元
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申请号： US10697172申请日： 2003-10-30
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公开(公告)号： US06862212B2公开(公告)日： 2005-03-01
- 发明人: Janice H. Nickel , Manoj Bhattacharyya
- 申请人： Janice H. Nickel , Manoj Bhattacharyya
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C11/15 ; G11C11/16 ; G11C11/56 ; H01F10/30 ; H01L21/8246 ; H01L27/105 ; H01L43/00 ; H01L43/08 ; G11C11/00
摘要：
A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
公开/授权文献
- US20040090844A1 Multi-bit magnetic memory cells 公开/授权日：2004-05-13
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