发明授权
- 专利标题： MIM capacitor with diffusion barrier
- 专利标题（中）： 具有扩散阻挡层的MIM电容器
-
申请号： US10619394申请日： 2003-07-15
-
公开(公告)号： US06864137B2公开(公告)日： 2005-03-08
- 发明人: Takashi Yoshitomi , Yuichi Nakashima
- 申请人： Takashi Yoshitomi , Yuichi Nakashima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： JP2001-065253 20010308
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/02 ; H01L21/304 ; H01L21/311 ; H01L21/316 ; H01L21/3205 ; H01L21/3213 ; H01L21/768 ; H01L21/822 ; H01L27/04 ; H01L21/8242
摘要：
A process of manufacturing a semiconductor device. The initial process steps are forming a first insulating film above a semiconductor substrate and removing a selected portion of the first insulating film to form an opening. The next step is depositing a first electrode, a dielectric film and a second electrode successively on a bottom portion of the opening, The deposits being oriented such that they are in substantially parallel relationship with a surface of the semiconductor substrate. The final steps are removing selected portions of the first electrode, the dielectric film and the second electrode, forming a capacitor at a selected position in the opening, forming a second insulating film at least in the opening, and forming a third insulating film on the second insulating film.
公开/授权文献
信息查询
IPC分类:
