发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US10843004申请日： 2004-05-10
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公开(公告)号： US06866747B2公开(公告)日： 2005-03-15
- 发明人: Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
- 申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
- 申请人地址： JP Osaka JP Miyagi
- 专利权人： Sharp Kabushiki Kaisha,Tadahiro Ohmi
- 当前专利权人： Sharp Kabushiki Kaisha,Tadahiro Ohmi
- 当前专利权人地址： JP Osaka JP Miyagi
- 代理机构： Edwards & Angell, LLP
- 代理商 David G. Conlin; Lisa Swiszcz Hazzard
- 优先权： JP2000-378506 20001213
- 主分类号： H05H1/46
- IPC分类号： H05H1/46 ; B23K10/00 ; C23C16/511 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01L21/31 ; H05H1/30 ; H05H1/00 ; C23C16/00
摘要：
On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
公开/授权文献
- US20040206456A1 Plasma processing apparatus 公开/授权日：2004-10-21
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