- 专利标题： Laser oscillation apparatus, exposure apparatus, semiconductor device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
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申请号： US09839139申请日： 2001-04-23
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公开(公告)号： US06870865B2公开(公告)日： 2005-03-22
- 发明人: Yoshiyuki Nagai , Naoto Sano
- 申请人： Yoshiyuki Nagai , Naoto Sano
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2000-126502 20000426
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; H01S3/104 ; H01S3/1055 ; H01S3/106 ; H01S3/136 ; H01S3/225 ; H01S5/022 ; H01S5/06 ; H01S5/062 ; H01S5/40 ; H01S3/13
摘要：
A laser oscillation apparatus includes a wavelength change unit for driving a wavelength selection element in a band-narrowing module and changing the oscillation wavelength of a laser beam to a target value, and an oscillation history memory for storing the oscillation state of the laser beam as an oscillation history. The wavelength change unit drives the wavelength selection element on the basis of the oscillation history and changes the oscillation wavelength of the laser beam to the target value.
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