Invention Grant
US06875655B2 Method of forming DRAM capacitors with protected outside crown surface for more robust structures
有权
形成具有受保护的外冠表面的DRAM电容器的方法用于更坚固的结构
- Patent Title: Method of forming DRAM capacitors with protected outside crown surface for more robust structures
- Patent Title (中): 形成具有受保护的外冠表面的DRAM电容器的方法用于更坚固的结构
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Application No.: US10802564Application Date: 2004-03-17
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Publication No.: US06875655B2Publication Date: 2005-04-05
- Inventor: Chun-Chieh Lin , Lan-Lin Chao , Chia-Hui Lin , Fu-Liang Yang , Chia-Shiung Tsai , Chanming Hu
- Applicant: Chun-Chieh Lin , Lan-Lin Chao , Chia-Hui Lin , Fu-Liang Yang , Chia-Shiung Tsai , Chanming Hu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Priority: TW92105779A 20030317
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/336 ; H01L21/8242 ; H01L27/02 ; H01L27/108

Abstract:
A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful for crown capacitors for future DRAM circuits with minimum feature sizes of 0.18 micrometer or less. A conformal conducting layer is deposited over trenches in an interlevel dielectric (ILD) layer, and is polished back to form capacitor bottom electrodes. A novel photoresist mask and etching are then used to pattern the ILD layer to provide a protective interlevel dielectric structure between capacitors. The protective structures prevent damage to the bottom electrodes during subsequent processing. The etching also exposes portions of the outer surface of bottom electrodes for increased capacitance (>50%). In a first embodiment the ILD structure is formed between pairs of adjacent bottom electrodes, and in a second embodiment the ILD structure is formed between four adjacent bottom electrodes.
Public/Granted literature
- US20040185613A1 Method of forming dram capacitors with protected outside crown surface for more robust structures Public/Granted day:2004-09-23
Information query
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