发明授权
US06887800B1 Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junction
有权
制造半导体器件的方法，该半导体器件具有在P / N结处相遇的高k栅极电介质和金属层
- 专利标题： Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junction
- 专利标题（中）： 制造半导体器件的方法，该半导体器件具有在P / N结处相遇的高k栅极电介质和金属层
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申请号： US10862169申请日： 2004-06-04
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公开(公告)号： US06887800B1公开(公告)日： 2005-05-03
- 发明人: Matthew V. Metz , Suman Datta , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Robert S. Chau
- 申请人： Matthew V. Metz , Suman Datta , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Mark V. Seeley
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3105 ; H01L21/336 ; H01L21/8238 ; H01L21/8244 ; H01L27/11 ; H01L29/51 ; H01L21/31 ; H01L21/469
摘要：
A method for making a semiconductor device is described. That method comprises modifying a first surface, and forming a high-k gate dielectric layer on an unmodified second surface.