发明授权
- 专利标题： Avoiding shorting in capacitors
- 专利标题（中）： 避免电容器短路
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申请号： US10248897申请日： 2003-02-28
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公开(公告)号： US06897501B2公开(公告)日： 2005-05-24
- 发明人: Haoren Zhuang , Ulrich Egger , Jingyu Lian , Gerhard Beitel , Karl Hornik
- 申请人： Haoren Zhuang , Ulrich Egger , Jingyu Lian , Gerhard Beitel , Karl Hornik
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies Aktiengesellschaft
- 当前专利权人： Infineon Technologies Aktiengesellschaft
- 当前专利权人地址： DE Munich
- 代理机构： Horizon IP Pte Ltd
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8246 ; H01L27/08 ; H01L27/115 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A capacitor structure having a capacitor with a top electrode, a bottom electrode, and a capacitor dielectric layer between the top and bottom electrodes is disclosed. The capacitor includes upper and lower portions. The demarcation between the upper and lower portion is located between top and bottom surfaces of the capacitor dielectric layer. A dielectric layer is provided on the sidewalls of the upper portion of the capacitor to prevent shorting between the electrodes that can be caused by a conductive fence formed during processing.
公开/授权文献
- US20040169211A1 AVOIDING SHORTING IN CAPACITORS 公开/授权日：2004-09-02
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