发明授权
- 专利标题： Radical processing of a sub-nanometer insulation film
- 专利标题（中）： 亚纳米绝缘膜的自由基处理
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申请号： US10310949申请日： 2002-12-06
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公开(公告)号： US06927112B2公开(公告)日： 2005-08-09
- 发明人: Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人： Masanobu Igeta , Shintaro Aoyama , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Crowell & Moring LLP
- 优先权： JP2001-374631 20011207; JP2001-374632 20011207; JP2001-374633 20011207; JP2001-401210 20011228; JP2002-118477 20020419
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/28 ; H01L21/314 ; H01L21/316 ; H01L29/51 ; H01L21/8238
摘要：
A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.
公开/授权文献
- US20030170945A1 Radical processing of a sub-nanometer insulation film 公开/授权日：2003-09-11