发明授权
- 专利标题： Differential floating gate nonvolatile memories
- 专利标题（中）： 差分浮栅非易失性存储器
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申请号： US10437262申请日： 2003-05-12
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公开(公告)号： US06950342B2公开(公告)日： 2005-09-27
- 发明人: Chad A. Lindhorst , Christopher J. Diorio , Troy N. Gilliland , Alberto Pesavento , Shail Srinivas , Yanjun Ma , Terry Hass , Kambiz Rahimi
- 申请人： Chad A. Lindhorst , Christopher J. Diorio , Troy N. Gilliland , Alberto Pesavento , Shail Srinivas , Yanjun Ma , Terry Hass , Kambiz Rahimi
- 申请人地址： US WA Seattle
- 专利权人： Impinj, Inc.
- 当前专利权人： Impinj, Inc.
- 当前专利权人地址： US WA Seattle
- 代理机构： Thelen Reid & Priest LLP
- 代理商 David B. Ritchie
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C20060101 ; G11C5/00 ; G11C7/06 ; G11C11/34 ; G11C16/02 ; G11C16/06 ; G11C16/28 ; G11C16/34 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
A number of designs for differential floating gate nonvolatile memories and memory arrays utilize differential pFET floating gate transistors to store information. Methods of implementing such memories and memory arrays together with methods of operation and test associated with such memories and memory arrays are presented.
公开/授权文献
- US20040037127A1 Differential floating gate nonvolatile memories 公开/授权日：2004-02-26
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