公开(公告)号：US06950342B2

公开(公告)日：2005-09-27

申请号：US10437262

申请日：2003-05-12

Applicant: Chad A. Lindhorst ,  Christopher J. Diorio ,  Troy N. Gilliland ,  Alberto Pesavento ,  Shail Srinivas ,  Yanjun Ma ,  Terry Hass ,  Kambiz Rahimi

Inventor： Chad A. Lindhorst ,  Christopher J. Diorio ,  Troy N. Gilliland ,  Alberto Pesavento ,  Shail Srinivas ,  Yanjun Ma ,  Terry Hass ,  Kambiz Rahimi

IPC: G11C16/04 ,  G11C20060101 ,  G11C5/00 ,  G11C7/06 ,  G11C11/34 ,  G11C16/02 ,  G11C16/06 ,  G11C16/28 ,  G11C16/34 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: G11C16/0441 ,  G11C16/28 ,  G11C16/3468 ,  G11C16/3486 ,  G11C2216/10

Abstract: A number of designs for differential floating gate nonvolatile memories and memory arrays utilize differential pFET floating gate transistors to store information. Methods of implementing such memories and memory arrays together with methods of operation and test associated with such memories and memory arrays are presented.

Abstract translation: 用于差分浮置非易失性存储器和存储器阵列的许多设计利用差分pFET浮栅晶体管来存储信息。 提出了实现这种存储器和存储器阵列的方法以及与这种存储器和存储器阵列相关联的操作和测试方法。

公开(公告)号：US06853583B2

公开(公告)日：2005-02-08

申请号：US10245183

申请日：2002-09-16

Applicant: Christopher J. Diorio ,  Chad Lindhorst ,  Shail Srinivas ,  Alberto Pesavento ,  Troy Gilliland

Inventor： Christopher J. Diorio ,  Chad Lindhorst ,  Shail Srinivas ,  Alberto Pesavento ,  Troy Gilliland

IPC: G11C16/34 ,  G11C16/06

CPC classification number: G11C16/3477 ,  G11C16/3404 ,  G11C16/3468 ,  G11C16/3472

Abstract: Methods and apparatuses prevent overtunneling in pFET-based nonvolatile floating gate memory (NVM) cells. During a tunneling process, in which charge carriers are removed from a floating gate of a pFET-based NVM cell, a channel current of a memory cell transistor is monitored and compared to a predetermined minimum channel current required to maintain a conducting channel in an injection transistor of the memory cell. When the monitored channel current drops below the predetermined minimum channel current, charge carriers are injected onto the floating gate by impact-ionized hot-electron injection (IHEI) so that overtunneling is avoided.

Abstract translation: 方法和装置可以防止基于pFET的非易失性浮动栅极存储器（NVM）单元中的超导。 在其中从基于pFET的NVM单元的浮置栅极去除电荷载流子的隧穿过程中，监测存储单元晶体管的沟道电流，并将其与在注入中维持导通通道所需的预定最小沟道电流进行比较 晶体管的存储单元。 当监测的通道电流下降到预定的最小通道电流以下时，电荷载流子通过冲击电离热电子注入（IHEI）注入到浮动栅极上，从而避免了超导。