发明授权
- 专利标题： Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness
- 专利标题（中）： 制造具有降低界面粗糙度的硅化镍的半导体器件的方法
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申请号： US11042194申请日： 2005-01-26
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公开(公告)号： US06967160B1公开(公告)日： 2005-11-22
- 发明人: Eric Paton , Paul Raymond Besser , Simon S. Chan , Fred Hause
- 申请人： Eric Paton , Paul Raymond Besser , Simon S. Chan , Fred Hause
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/00 ; H01L21/265 ; H01L21/285 ; H01L21/336 ; H01L21/44 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/78 ; H01L29/786
摘要：
Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.
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