发明授权
- 专利标题： Semiconductor device having a shielding layer
- 专利标题（中）： 具有屏蔽层的半导体器件
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申请号： US10753081申请日： 2004-01-08
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公开(公告)号： US07049676B2公开(公告)日： 2006-05-23
- 发明人: Shinji Tanabe , Tuguto Maruko
- 申请人： Shinji Tanabe , Tuguto Maruko
- 申请人地址： JP Tokyo
- 专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volentine Francos & Whitt, PLLC
- 优先权： JP2003-002476 20030108
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L29/82 ; H01L43/00 ; H01L29/76 ; H01L9/94
摘要：
The semiconductor device includes a multilevel interconnection formed on a semiconductor substrate. The multilevel interconnection includes a plurality of wiring layers each of which is insulated by an insulating layer. A metal member is formed as a shielding film in a same plane as a wiring layer. As a result, the shielding layer can be formed without increasing the number of process steps.
公开/授权文献
- US20040222487A1 Semiconductor device having a shielding layer 公开/授权日：2004-11-11
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