- 专利标题: Method of forming metal/high-k gate stacks with high mobility
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申请号: US10873733申请日: 2004-06-22
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公开(公告)号: US07115959B2公开(公告)日: 2006-10-03
- 发明人: Wanda Andreoni , Alessandro C. Callegari , Eduard A. Cartier , Alessandro Curioni , Christopher P. D'Emic , Evengi Gousev , Michael A. Gribelyuk , Paul C. Jamison , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Carlo A. Pignedoli , Joseph P. Shepard, Jr. , Sufi Zafar
- 申请人: Wanda Andreoni , Alessandro C. Callegari , Eduard A. Cartier , Alessandro Curioni , Christopher P. D'Emic , Evengi Gousev , Michael A. Gribelyuk , Paul C. Jamison , Rajarao Jammy , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Carlo A. Pignedoli , Joseph P. Shepard, Jr. , Sufi Zafar
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.