发明授权
- 专利标题： Electropolishing method for removing particles from wafer surface
- 专利标题（中）： 从晶片表面去除颗粒的电抛光方法
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申请号： US10761477申请日： 2004-01-20
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公开(公告)号： US07128821B2公开(公告)日： 2006-10-31
- 发明人: Shih-Ho Lin , Chung-Chang Chen , Kei-Wei Chen , Shih-Tzung Chang , Chao-Lung Chen , Po-Jen Shih , Yu-Ku Lin , Ying-Lang Wang
- 申请人： Shih-Ho Lin , Chung-Chang Chen , Kei-Wei Chen , Shih-Tzung Chang , Chao-Lung Chen , Po-Jen Shih , Yu-Ku Lin , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： C25D5/34
- IPC分类号： C25D5/34 ; C25F1/00
摘要：
An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.