公开(公告)号：US20050155869A1

公开(公告)日：2005-07-21

申请号：US10761477

申请日：2004-01-20

申请人： Shih-Ho Lin ,  Chung-Chang Chen ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Chao-Lung Chen ,  Po-Jen Shih ,  Yu-Ku Lin ,  Ying-Lang Wang

发明人： Shih-Ho Lin ,  Chung-Chang Chen ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Chao-Lung Chen ,  Po-Jen Shih ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC分类号： B24B37/04 ,  C25D3/38 ,  C25D5/18 ,  C25D7/12 ,  C25F3/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  B23H3/00

CPC分类号： H01L21/76843 ,  B24B37/042 ,  B24B37/046 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  C25F3/02 ,  H01L21/02068 ,  H01L21/32115 ,  H01L21/76865 ,  H01L21/76873

摘要： An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.

摘要翻译： 公开了一种用于从晶片去除潜在的器件污染颗粒的电抛光方法。 该方法包括将晶片浸入电解抛光电解质溶液中，并通过晶片和电解质溶液之间的旋转摩擦与电解结合从晶片去除缺陷和颗粒。 该方法有效地从各种尺寸的通孔开口去除颗粒，包括宽度小于约0.2μm的通孔。

公开(公告)号：US06181916B2

公开(公告)日：2001-01-30

申请号：US09140890

申请日：1998-08-27

申请人： Michael Mou ,  Chung Chang Chen

发明人： Michael Mou ,  Chung Chang Chen

IPC分类号： H04Q720

CPC分类号： H04M1/72502 ,  H04B1/00 ,  H04B1/406

摘要： A communication system includes a primary unit transmitting a first signal at a first instance, receiving a second signal at a second instance and energized by a power source having a voltage level, a secondary unit transmitting a third signal at a first instance, receiving a fourth signal at a second instance, and having a first communication mode and a second communication-shut mode, and a mode-changing device enabling the primary unit to generate a mode-changing signal to be received by the secondary unit for changing the secondary unit from the first communication mode into the second communication-shut mode when the voltage level falls below a specific value. A mode-changing method for such communication system is also provided.

摘要翻译： 一种通信系统包括：主单元，在第一情况下发送第一信号，在第二实例处接收第二信号，并由具有电压电平的电源激励，辅助单元在第一情况下发送第三信号，接收第四信号 信号，并且具有第一通信模式和第二通信关闭模式，以及模式切换装置，其使得主单元能够生成要由次级单元接收的模式改变信号，以将次级单元从 当电压水平低于特定值时，第一通信模式进入第二通信关闭模式。 还提供了一种用于这种通信系统的模式改变方法。

公开(公告)号：US07128821B2

公开(公告)日：2006-10-31

申请号：US10761477

申请日：2004-01-20

申请人： Shih-Ho Lin ,  Chung-Chang Chen ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Chao-Lung Chen ,  Po-Jen Shih ,  Yu-Ku Lin ,  Ying-Lang Wang

发明人： Shih-Ho Lin ,  Chung-Chang Chen ,  Kei-Wei Chen ,  Shih-Tzung Chang ,  Chao-Lung Chen ,  Po-Jen Shih ,  Yu-Ku Lin ,  Ying-Lang Wang

IPC分类号： C25D5/34 ,  C25F1/00

CPC分类号： H01L21/76843 ,  B24B37/042 ,  B24B37/046 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  C25F3/02 ,  H01L21/02068 ,  H01L21/32115 ,  H01L21/76865 ,  H01L21/76873

摘要： An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.

摘要翻译： 公开了一种用于从晶片去除潜在的器件污染颗粒的电抛光方法。 该方法包括将晶片浸入电解抛光电解质溶液中，并通过晶片和电解质溶液之间的旋转摩擦与电解结合从晶片去除缺陷和颗粒。 该方法有效地从各种尺寸的通孔开口去除颗粒，包括宽度小于约0.2μm的通孔。