发明授权
- 专利标题: Method of fabricating T-type gate
- 专利标题(中): 制造T型门的方法
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申请号: US11179983申请日: 2005-07-12
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公开(公告)号: US07141464B2公开(公告)日: 2006-11-28
- 发明人: Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
- 申请人: Jong Moon Park , Kun Sik Park , Seong Wook Yoo , Yong Sun Yoon , Sang Gi Kim , Yoon Kyu Bae , Byung Won Lim , Jin Gun Koo , Bo Woo Kim
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2004-0081397 20041012
- 主分类号: H01L21/338
- IPC分类号: H01L21/338
摘要:
Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.
公开/授权文献
- US20060079030A1 Method of fabricating T-type gate 公开/授权日:2006-04-13