公开(公告)号：US07141464B2

公开(公告)日：2006-11-28

申请号：US11179983

申请日：2005-07-12

Applicant: Jong Moon Park ,  Kun Sik Park ,  Seong Wook Yoo ,  Yong Sun Yoon ,  Sang Gi Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Bo Woo Kim

Inventor： Jong Moon Park ,  Kun Sik Park ,  Seong Wook Yoo ,  Yong Sun Yoon ,  Sang Gi Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Bo Woo Kim

IPC: H01L21/338

CPC classification number: H01L21/28587

Abstract: Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.

Abstract translation: 提供一种制造T型栅极的方法，包括以下步骤：分别在衬底上形成预定厚度的第一光致抗蚀剂层，阻挡层和第二光致抗蚀剂层; 在所述第二光致抗蚀剂层和所述阻挡层上形成T型栅极的主体图案; 暴露第二光致抗蚀剂层的预定部分以形成T型栅极的头部图案，并且进行热处理工艺以在除了T型的头部图案之外的第二光致抗蚀剂层的预定区域处产生交联 门; 在所得结构的整个表面上进行曝光处理，然后去除所述暴露部分; 在所得结构的整个表面上形成预定厚度的金属层，然后去除第一光致抗蚀剂层，阻挡层，产生交联的第二光致抗蚀剂层的预定区域和金属层 ，由此可以容易地进行化合物半导体器件制造工艺，并且通过增加制造成品率和简化制造工艺来降低制造成本。

公开(公告)号：US07190432B2

公开(公告)日：2007-03-13

申请号：US11249783

申请日：2005-10-13

Applicant: Sang Gi Kim ,  Ju Wook Lee ,  Jong Moon Park ,  Seong Wook Yoo ,  Kun Sik Park ,  Yong Sun Yoon ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Boo Woo Kim

Inventor： Sang Gi Kim ,  Ju Wook Lee ,  Jong Moon Park ,  Seong Wook Yoo ,  Kun Sik Park ,  Yong Sun Yoon ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Boo Woo Kim

IPC: G03B27/32 ,  G03B27/42 ,  G03B27/70 ,  G03B27/54

CPC classification number: G03F7/70425

Abstract: Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Abstract translation: 提供了一种在半导体器件制造工艺中使用的晶片曝光装置，该曝光装置包括：用于反射从光源提供的光的反射镜; 用于改变从反射镜提供的光的路径的光路改变器; 首先将镜子安装在光路改换器的两侧，以改变光线的路径; 第二个镜子安装在材料的两侧以改变光线的路径; 和第三反射镜，其安装在掩模的两侧，以将由第一反射镜反射的光进入掩模，并将通过掩模的光进入第二反射镜，由此可以连续地将一个表面，两个表面或一个 在晶片一次对准的状态下晶片的比表面。

公开(公告)号：US20060079030A1

公开(公告)日：2006-04-13

申请号：US11179983

申请日：2005-07-12

Applicant: Jong Moon Park ,  Kun Sik Park ,  Seong Wook Yoo ,  Yong Sun Yoon ,  Sang Gi Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Bo Woo Kim

Inventor： Jong Moon Park ,  Kun Sik Park ,  Seong Wook Yoo ,  Yong Sun Yoon ,  Sang Gi Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Bo Woo Kim

IPC: H01L21/8232 ,  H01L21/338

CPC classification number: H01L21/28587

Abstract: Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.

公开(公告)号：US07170044B2

公开(公告)日：2007-01-30

申请号：US10913398

申请日：2004-08-09

Applicant: Kun Sik Pakr ,  Seong Wook Yoo ,  Jong Moon Park ,  Yong Sun Yoon ,  Sang Gi Kim ,  Bo Woo Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo

Inventor： Kun Sik Pakr ,  Seong Wook Yoo ,  Jong Moon Park ,  Yong Sun Yoon ,  Sang Gi Kim ,  Bo Woo Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo

IPC: H01J40/14

CPC classification number: H01L31/02161 ,  H01L31/02019 ,  H01L31/022408

Abstract: Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Abstract translation: 提供了一种光电检测器，其中具有界面电荷和俘获电荷的透明非导电材料沉积在半导体表面上，以在半导体的表面上形成耗尽区，并且耗尽区被用作光学检测区域， 从而不仅能够提高对具有紫外线和蓝色范围的波长的光的检测，而且可以改善具有可见光和红外范围的波长的滤光，并且其制造方法与通用硅CMOS工艺相兼容。

公开(公告)号：US20060109444A1

公开(公告)日：2006-05-25

申请号：US11249783

申请日：2005-10-13

Applicant: Sang Gi Kim ,  Ju Wook Lee ,  Jong Moon Park ,  Seong Wook Yoo ,  Kun Sik Park ,  Yong Sun Yoon ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Boo Woo Kim

Inventor： Sang Gi Kim ,  Ju Wook Lee ,  Jong Moon Park ,  Seong Wook Yoo ,  Kun Sik Park ,  Yong Sun Yoon ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo ,  Boo Woo Kim

IPC: G03B27/54

CPC classification number: G03F7/70425

Abstract: Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Abstract translation: 提供了一种在半导体器件制造工艺中使用的晶片曝光装置，该曝光装置包括：用于反射从光源提供的光的反射镜; 用于改变从反射镜提供的光的路径的光路改变器; 首先将镜子安装在光路改换器的两侧，以改变光线的路径; 第二个镜子安装在材料的两侧以改变光线的路径; 和第三反射镜，其安装在掩模的两侧，以将由第一反射镜反射的光进入掩模，并将通过掩模的光进入第二反射镜，由此可以连续地将一个表面，两个表面或一个 在晶片一次对准的状态下晶片的比表面。