发明授权
- 专利标题： Heterostructure resistor and method of forming the same
- 专利标题（中）： 异质结构电阻及其形成方法
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申请号： US10745831申请日： 2003-12-24
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公开(公告)号： US07183593B2公开(公告)日： 2007-02-27
- 发明人: Yee-Chia Yeo , Wen-Chin Lee , Chih-Hsin Ko , Chung-Hu Ge , Chun-Chieh Lin , Chenming Hu
- 申请人： Yee-Chia Yeo , Wen-Chin Lee , Chih-Hsin Ko , Chung-Hu Ge , Chun-Chieh Lin , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/86
- IPC分类号： H01L29/86 ; H01L29/205
摘要：
A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.
公开/授权文献
- US20050127400A1 Heterostructure resistor and method of forming the same 公开/授权日：2005-06-16
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