公开(公告)号：US07183593B2

公开(公告)日：2007-02-27

申请号：US10745831

申请日：2003-12-24

申请人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ge ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ge ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L29/86 ,  H01L29/205

CPC分类号： H01L27/0629 ,  H01L29/165 ,  H01L29/8605

摘要： A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.

摘要翻译： 异质结构电阻器包括形成在半导体衬底的一部分中的掺杂区域，该衬底包括具有第一自然晶格常数的第一半导体材料。 掺杂区域包括覆盖半导体衬底的半导体层。 半导体层包括具有第二自然晶格常数的第二半导体材料。

公开(公告)号：US20050127400A1

公开(公告)日：2005-06-16

申请号：US10745831

申请日：2003-12-24

申请人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ke ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Yee-Chia Yeo ,  Wen-Chin Lee ,  Chih-Hsin Ko ,  Chung-Hu Ke ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L27/06 ,  H01L29/02 ,  H01L29/165 ,  H01L29/8605 ,  H01L31/109

CPC分类号： H01L27/0629 ,  H01L29/165 ,  H01L29/8605

摘要： A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.

摘要翻译： 异质结构电阻器包括形成在半导体衬底的一部分中的掺杂区域，该衬底包括具有第一自然晶格常数的第一半导体材料。 掺杂区域包括覆盖半导体衬底的半导体层。 半导体层包括具有第二自然晶格常数的第二半导体材料。

公开(公告)号：US07646068B2

公开(公告)日：2010-01-12

申请号：US11483913

申请日：2006-07-10

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L29/76 ,  H01L29/00

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

摘要翻译： 半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。 电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128.应变沟道晶体管132形成在第二有源区域中。 该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

公开(公告)号：US20050035409A1

公开(公告)日：2005-02-17

申请号：US10729095

申请日：2003-12-05

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L27/01 ,  H01L29/78

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

摘要翻译： 半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。 电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128.应变沟道晶体管132形成在第二有源区域中。 该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

公开(公告)号：US20060255365A1

公开(公告)日：2006-11-16

申请号：US11483913

申请日：2006-07-10

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L31/00

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

公开(公告)号：US07112495B2

公开(公告)日：2006-09-26

申请号：US10729095

申请日：2003-12-05

申请人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

发明人： Chih-Hsin Ko ,  Wen-Chin Lee ,  Yee-Chia Yeo ,  Chun-Chieh Lin ,  Chenming Hu

IPC分类号： H01L21/336 ,  H01L21/76

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

摘要翻译： 半导体芯片包括其中设置有第一和第二有源区的半导体衬底126。 电阻器124形成在第一有源区域中，并且电阻器124包括形成在两个端子136之间的掺杂区域128。 应变通道晶体管132形成在第二有源区中。 该晶体管包括第一和第二应力源141，该第一和第二应力器141形成在与基片相反的相邻的应变通道区域143之间。

公开(公告)号：US20070161206A1

公开(公告)日：2007-07-12

申请号：US11586936

申请日：2006-10-26

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

IPC分类号： H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7846 ,  H01L29/7848

摘要： A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.

摘要翻译： 公开了用于形成用于应变通道晶体管的改进的隔离结构的方法和系统。 在一个示例中，形成包括填充有含氮衬里和间隙填料的沟槽的隔离结构。 含氮衬垫使隔离结构能够减小对通道区域的压应变贡献。

公开(公告)号：US20050285140A1

公开(公告)日：2005-12-29

申请号：US10875141

申请日：2004-06-23

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L29/10 ,  H01L31/0328

CPC分类号： H01L21/823878 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7846 ,  H01L29/7848

摘要： A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.

摘要翻译： 公开了用于形成用于应变通道晶体管的改进的隔离结构的方法和系统。 在一个示例中，形成包括填充有含氮衬里和间隙填料的沟槽的隔离结构。 含氮衬垫使隔离结构能够减小对通道区域的压应变贡献。

公开(公告)号：US20050035426A1

公开(公告)日：2005-02-17

申请号：US10687377

申请日：2003-10-16

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Chung-Hu Ge ,  Wen-Chin Lee

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Chung-Hu Ge ,  Wen-Chin Lee

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/00 ,  H01L21/8238

CPC分类号： H01L21/28123 ,  H01L21/76232 ,  H01L21/823481 ,  H01L29/7833

摘要： A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.

公开(公告)号：US08569146B2

公开(公告)日：2013-10-29

申请号：US13013296

申请日：2011-01-25

申请人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

发明人： Chih-Hsin Ko ,  Yee-Chia Yeo ,  Wen-Chin Lee ,  Chung-Hu Ge

IPC分类号： H01L21/76

CPC分类号： H01L21/823878 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/7846 ,  H01L29/7848

摘要： A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.

摘要翻译： 公开了用于形成用于应变通道晶体管的改进的隔离结构的方法和系统。 在一个示例中，形成包括填充有含氮衬里和间隙填料的沟槽的隔离结构。 含氮衬垫使隔离结构能够减小对通道区域的压应变贡献。