Invention Grant
- Patent Title: Method and apparatus for fabricating metal layer
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Application No.: US10833154Application Date: 2004-04-28
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Publication No.: US07226860B2Publication Date: 2007-06-05
- Inventor: Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
- Applicant: Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manfacturing Co. Ltd.
- Current Assignee: Taiwan Semiconductor Manfacturing Co. Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.
Public/Granted literature
- US20050245072A1 Method and apparatus for fabricating metal layer Public/Granted day:2005-11-03
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