Invention Grant
- Patent Title: Method for releasing a micromechanical structure
- Patent Title (中): 释放微机械结构的方法
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Application No.: US11081645Application Date: 2005-03-17
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Publication No.: US07294279B2Publication Date: 2007-11-13
- Inventor: Fei-Yun Chen , Tzu-Yang Wu , Shih-Shiung Chen
- Applicant: Fei-Yun Chen , Tzu-Yang Wu , Shih-Shiung Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C25F3/00

Abstract:
A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.
Public/Granted literature
- US20060207964A1 Method for releasing a micromechanical structure Public/Granted day:2006-09-21
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