公开(公告)号：US07294279B2

公开(公告)日：2007-11-13

申请号：US11081645

申请日：2005-03-17

申请人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

IPC分类号： C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00

CPC分类号： C03C15/00 ,  B81B2201/042 ,  B81C1/00476 ,  H01L21/0206 ,  H01L21/32134

摘要： A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

摘要翻译： 一种用于释放微机械结构的方法。 提供基板。 在衬底上方提供至少一个微机械结构层，其中微机械结构层由硅材料的牺牲层维持。 提供了一种基于胺的蚀刻剂来蚀刻硅材料。 也就是说，在用胺类蚀刻剂进行后清洗过程时，可以同时除去聚合物残余物和硅的牺牲层而无需任何额外的蚀刻工艺。

公开(公告)号：US20060207964A1

公开(公告)日：2006-09-21

申请号：US11081645

申请日：2005-03-17

申请人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Tzu-Yang Wu ,  Shih-Shiung Chen

IPC分类号： C23F1/00 ,  C03C25/68

CPC分类号： C03C15/00 ,  B81B2201/042 ,  B81C1/00476 ,  H01L21/0206 ,  H01L21/32134

摘要： A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

摘要翻译： 一种用于释放微机械结构的方法。 提供基板。 在衬底上方提供至少一个微机械结构层，其中微机械结构层由硅材料的牺牲层维持。 提供了一种基于胺的蚀刻剂来蚀刻硅材料。 也就是说，在用胺类蚀刻剂进行后清洗过程时，可以同时除去聚合物残余物和硅的牺牲层而无需任何额外的蚀刻工艺。

公开(公告)号：US20060088784A1

公开(公告)日：2006-04-27

申请号：US10971268

申请日：2004-10-21

申请人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chin Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chin Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： G03C11/12

CPC分类号： G03F7/423

摘要： The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

摘要翻译： 本主题涉及在光致抗蚀剂膜已经经受高剂量和高能量离子注入工艺之后剥离光致抗蚀剂的方法。 该方法包括将光致抗蚀剂膜浸入去离子水中，用氧等离子体进行干法蚀刻，并将其浸入Caro酸溶液中以提高从底层衬底去除膜的通过量。 该方法还可用于剥离已经通过其他类型的工艺如干蚀刻转移步骤和化学处理而被硬化或改变的光致抗蚀剂。 在一些应用中，干法蚀刻步骤可以从剥离工艺中省略，或者干法蚀刻步骤可以与一体化工艺中的水组合。

公开(公告)号：US07144673B2

公开(公告)日：2006-12-05

申请号：US10971268

申请日：2004-10-21

申请人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Fei-Yun Chen ,  Jen-Shian Shieh ,  Hao-Chih Yuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： G03F7/30 ,  G03F7/42

CPC分类号： G03F7/423

摘要： The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.

摘要翻译： 本主题涉及在光致抗蚀剂膜已经经受高剂量和高能量离子注入工艺之后剥离光致抗蚀剂的方法。 该方法包括将光致抗蚀剂膜浸入去离子水中，用氧等离子体进行干法蚀刻，并将其浸入Caro酸溶液中以提高从底层衬底去除膜的通过量。 该方法还可用于剥离已经通过其他类型的工艺如干蚀刻转移步骤和化学处理而被硬化或改变的光致抗蚀剂。 在一些应用中，干法蚀刻步骤可以从剥离工艺中省略，或者干法蚀刻步骤可以与一体化工艺中的水组合。

公开(公告)号：US5705320A

公开(公告)日：1998-01-06

申请号：US747502

申请日：1996-11-12

申请人： Shun-Liang Hsu ,  Shih-Shiung Chen

发明人： Shun-Liang Hsu ,  Shih-Shiung Chen

IPC分类号： G03F7/20 ,  G03F9/00 ,  G03F7/22

CPC分类号： G03F7/70541 ,  G03F7/70066 ,  G03F7/70425 ,  G03F7/70466 ,  G03F9/00 ,  G03F9/70 ,  G03F9/7076 ,  H01L2223/54493

摘要： The preservation of alignment marks and identification marks throughout the multitude of processing steps employed for the manufacture of integrated circuit chips often requires the inclusion of additional operations which impact production cost and product throughput. Current increased utilization of global planarization operations such as chemical-mechanical-polishing have forced the inclusion of additional window opening lithographic steps requiring additional masks and etch operations to keep these marks from being obscured. This invention provides a technique and a reticle design for clearing and preserving alignment and wafer identification marks through planarization and metallization levels with improved throughput and without the need for additional reticles to clear the marks. The alignment mark areas are exposed by a large clear-out window located in the frame area of the contact/via reticle while the wafer identification marks are accommodated in the same fashion by the metal pattern reticle. The lithography for integrated circuit pattern exposure and the window exposure is accomplished by a single stepper pass at each level.

摘要翻译： 在用于制造集成电路芯片的许多处理步骤中，保留对准标记和识别标记通常需要包含影响生产成本和产品吞吐量的附加操作。 当前增加的全局平面化操作（例如化学机械抛光）的利用率迫使包含额外的开窗光刻步骤需要额外的掩模和蚀刻操作以保持这些标记不被遮蔽。 本发明提供一种用于通过平坦化和金属化水平清除和保持对准和晶片识别标记的技术和掩模版设计，其具有改进的生产量，并且不需要额外的掩模版来清除标记。 对准标记区域通过位于接触/通过掩模版的框架区域中的大的透明窗口曝光，同时通过金属图案掩模版以相同的方式容纳晶片识别标记。 用于集成电路图案曝光和窗户曝光的光刻通过在每个级别的单个步进通过来实现。

公开(公告)号：US5798192A

公开(公告)日：1998-08-25

申请号：US834330

申请日：1997-04-15

申请人： Ming-Chu King ,  Shih-Shiung Chen ,  Ying-Chen Chao

发明人： Ming-Chu King ,  Shih-Shiung Chen ,  Ying-Chen Chao

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/40 ,  G03F1/50

摘要： A structure of a mask for use in a lithography process in a semiconductor fabrication procedure is disclosed. The structure comprising: a mask base being made of transparent material; a plurality of patterns formed on said mask base, said patterns being used for generating an image on a wafer and being made of a conductive opaque material; and a conductive layer formed on said mask base and said plurality of patterns.

摘要翻译： 公开了一种用于半导体制造过程中的光刻工艺中的掩模的结构。 该结构包括：掩模基底，由透明材料制成; 形成在所述掩模基底上的多个图案，所述图案用于在晶片上产生图像并由导电不透明材料制成; 以及形成在所述掩模基底和所述多个图案上的导电层。

公开(公告)号：US06687456B1

公开(公告)日：2004-02-03

申请号：US10196595

申请日：2002-07-15

申请人： Tien-Hsing Woo ,  Ruei-Hung Jang ,  Chih-Lin Ying ,  Ming-Kuo Yu ,  Shih-Shiung Chen

发明人： Tien-Hsing Woo ,  Ruei-Hung Jang ,  Chih-Lin Ying ,  Ming-Kuo Yu ,  Shih-Shiung Chen

IPC分类号： F21V700

CPC分类号： H01L21/67115

摘要： An in-line fluid heater including a heater housing that contains a parabolic lamp vessel which houses an infrared lamp. A parabolic reflection vessel in the heater housing is separated from the parabolic lamp vessel by a convex lens. A quartz plate seals the heater housing, and at least one, and typically, multiple leak detectors may be provided in the heater housing. The interior reflective surface of the reflection vessel reflects the heat energy in parallel rays through the quartz plate and to the fluid to be heated. The leak detectors may be connected to an RC circuit which operates a controller to actuate a buzzer or alarm and terminate operation of the heater upon leakage of fluid into the heater housing.

摘要翻译： 一种在线流体加热器，其包括加热器壳体，该加热器壳体包含容纳红外灯的抛物面灯管。 加热器壳体中的抛物面反射容器通过凸透镜与抛物线灯容器分离。 石英板密封加热器壳体，并且可以在加热器壳体中提供至少一个，并且通常多个泄漏检测器。 反射容器的内部反射表面将平行射线中的热能反射通过石英板和待加热的流体。 泄漏检测器可以连接到RC电路，RC电路操作控制器来致动蜂鸣器或报警器，并且在将流体泄漏到加热器壳体中时终止加热器的操作。

公开(公告)号：US06617221B1

公开(公告)日：2003-09-09

申请号：US10354044

申请日：2003-01-30

申请人： Hao-Chih Yuan ,  Nan-Huan Kuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

发明人： Hao-Chih Yuan ,  Nan-Huan Kuan ,  Yuan-Ko Hwang ,  Shih-Shiung Chen

IPC分类号： H01L31331

CPC分类号： H01L28/40 ,  H01L27/0629 ,  H01L27/0805 ,  H01L29/94

摘要： A method for manufacturing capacitors is disclosed. The method is applicable to a capacitor whose upper electrode area is smaller than the lower electrode area. It is featured in that a material, such as a TiN hard mask, is inserted between the conventional electrode metal layer and photo resist layer. This enables one to perform the in-situ photo resist layer removal step after dry etching the upper electrode metal. Since the photo resist layer removal step uses oxygen plasma, the surface of the lower electrode polysilicon is formed with a protective oxide layer because the dielectric layer is etched during the process of dry etching the upper electrode metal. Using the disclosed method can solve the corrosion problem on the upper electrode metal and avoid the lower electrode polysilicon from being corroded by the wet etchant.

摘要翻译： 公开了制造电容器的方法。 该方法适用于上电极面积小于下电极面积的电容器。 其特征在于，将诸如TiN硬掩模的材料插入在常规电极金属层和光致抗蚀剂层之间。 这使得能够在干蚀刻上电极金属之后执行原位光刻胶层去除步骤。 由于光刻胶层去除步骤使用氧等离子体，因此在干蚀刻上电极金属的过程中蚀刻电介质层，所以下电极多晶硅的表面形成有保护氧化物层。 使用所公开的方法可以解决上电极金属的腐蚀问题，并避免下电极多晶硅被湿蚀刻剂腐蚀。

公开(公告)号：US6143644A

公开(公告)日：2000-11-07

申请号：US154845

申请日：1998-09-17

申请人： Shih-Shiung Chen ,  Hsiang-Chung Liu

发明人： Shih-Shiung Chen ,  Hsiang-Chung Liu

IPC分类号： H01L21/027 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/3105 ,  H01L21/0274 ,  H01L21/76819

摘要： A new method of preventing passivation keyhole damage and resist extrusion using a hydrophillic solvent before photoresist coating is described. Semiconductor device structures are formed in and on a semiconductor substrate and covered by an insulating layer. Metal lines are formed overlying the insulating layer wherein there is a gap between two of the metal lines. A passivation layer is deposited overlying the metal lines wherein the gap is not filled completely by the passivation layer. The passivation layer is coated with a hydrophillic solvent wherein the hydrophillic solvent completely fills the gap. The passivation layer is coated with a photoresist layer which is exposed and developed to form a photoresist mask. The hydrophillic solvent completely filling the gap allows a uniform thickness photoresist layer. The passivation layer is etched away where it is not covered by the photoresist mask where a bonding pad is formed.

摘要翻译： 描述了在光致抗蚀剂涂覆之前，使用亲水溶剂防止钝化键孔损伤和抵抗挤出的新方法。 半导体器件结构形成在半导体衬底中并在半导体衬底上并被绝缘层覆盖。 金属线形成在绝缘层上，其中在两条金属线之间存在间隙。 沉积在金属线上的钝化层，其中间隙未被钝化层完全填充。 钝化层涂覆有亲水溶剂，其中亲水溶剂完全填充间隙。 钝化层涂覆有曝光和显影以形成光致抗蚀剂掩模的光致抗蚀剂层。 完全填充间隙的亲水溶剂允许均匀厚度的光致抗蚀剂层。 钝化层被蚀刻掉，其中它不被形成接合焊盘的光致抗蚀剂掩模覆盖。

公开(公告)号：US6021921A

公开(公告)日：2000-02-08

申请号：US957913

申请日：1997-10-27

申请人： Ho-Ku Lan ,  Chen-Cheng Kuo ,  Hung-Chih Chen ,  Shih-Shiung Chen

发明人： Ho-Ku Lan ,  Chen-Cheng Kuo ,  Hung-Chih Chen ,  Shih-Shiung Chen

IPC分类号： B67D7/02 ,  B67D7/78 ,  B67D5/08

CPC分类号： B67D7/0238 ,  B67D7/0261 ,  B67D7/78 ,  Y10T137/3109 ,  Y10T137/3127

摘要： The present invention discloses a liquid dispensing system and a method for dispensing liquid that includes two hermetically sealed tanks each having a liquid container with a conduit pipe connecting the two containers. A differential pressure exists between the two tanks such that a process liquid can be fed from the second container into a dispensing nozzle under the differential pressure and the gravity of the liquid without the need of a pumping system. The problems of gel formation normally observed in conventional dispensing systems can be eliminated. A high viscosity, short shelf life liquid can be most suitably dispensed by the present invention novel dispensing system and method.

摘要翻译： 本发明公开了一种液体分配系统和分配液体的方法，该液体包括两个气密密封的罐，每个液体容器具有连接两个容器的导管的液体容器。 在两个罐之间存在差压，使得处理液体可以在压差和液体的重力下从第二容器进入分配喷嘴，而不需要泵送系统。 可以消除在常规分配系统中通常观察到的凝胶形成的问题。 通过本发明新颖的分配系统和方法可以最适当地分配高粘度，短的保质期液体。