Invention Grant
- Patent Title: Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element
- Patent Title (中): 磁阻效应元件,磁头和使用巨磁阻效应元件的磁存储系统
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Application No.: US11079322Application Date: 2005-03-15
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Publication No.: US07375405B2Publication Date: 2008-05-20
- Inventor: Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
- Applicant: Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
- Applicant Address: JP Kawasaki-shi
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Kawasaki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP10-185475 19980630; JP10-237821 19980824; JP11-097072 19990402
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; G11B5/127

Abstract:
A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
Public/Granted literature
- US20050167770A1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system Public/Granted day:2005-08-04
Information query
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