发明授权
- 专利标题: Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element
- 专利标题(中): 磁阻效应元件,磁头和使用巨磁阻效应元件的磁存储系统
-
申请号: US11079322申请日: 2005-03-15
-
公开(公告)号: US07375405B2公开(公告)日: 2008-05-20
- 发明人: Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
- 申请人: Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
- 申请人地址: JP Kawasaki-shi
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP10-185475 19980630; JP10-237821 19980824; JP11-097072 19990402
- 主分类号: H01L29/82
- IPC分类号: H01L29/82 ; H01L43/00 ; G11B5/127
摘要:
A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
公开/授权文献
信息查询
IPC分类: