利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

231 条记录 (耗时 0.051 秒)

    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
    4.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
    磁阻效应元件，磁头，磁头组件，磁存储系统

    公开(公告)号：US07738220B1

    公开(公告)日：2010-06-15

    申请号：US11779034

    申请日：2007-07-17

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

    摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

    Magnetoresistance effect element
    8.
    发明授权
    Magnetoresistance effect element 失效
    磁阻效应元件

    公开(公告)号：US06088195A

    公开(公告)日：2000-07-11

    申请号：US827122

    申请日：1997-03-27

    申请人： Yuzo Kamiguchi ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F10/18 ,  H01F10/187 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3281 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3295

    摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).

    摘要翻译： 磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜， 设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向 磁化彼此不同。 此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及 第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜 厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

    Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof
    9.
    发明授权
    Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof 失效
    交换耦合膜，磁阻效应元件和磁头

    公开(公告)号：US5976713A

    公开(公告)日：1999-11-02

    申请号：US53651

    申请日：1998-04-02

    申请人： Hiromi Fuke ,  Kazuhiro Saito ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hiromi Fuke ,  Kazuhiro Saito ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： C23C14/14 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/66

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3218 ,  H01F10/3268 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1107

    摘要： An exchange-coupling film has an antiferromagnetic film consisting of an antiferromagnetic alloy such as an RMn alloy or an RMnFe alloy (R is at least one kind of element selected from Ir, Rh, Pt, Au, Ag, Co, Pd, Ni, Cr, Ge, Ru and Cu) and a ferromagnetic film stacked with the antiferromagnetic film. The antiferromagnetic film is oriented in its plane. Further, the antiferromagnetic film has a large grain diameter of such as 5 nm or more. The antiferromagnetic film can be obtained by forming a film with an alloy target of which oxygen content is 1% by weight or less. An exchange-coupling film using such an antiferromagnetic film has exchange-coupling force enough large at room temperature and high temperature region together with excellent corrosion resistance or heat resistance. The exchange-coupling film is provided with an electrode for energizing an electric current to the ferromagnetic film and is used as, for example, a spin valve type magneto-resistance effect element.

    摘要翻译： 交换耦合膜具有由诸如RMn合金或RMnFe合金的反铁磁合金构成的反铁磁膜（R是选自Ir，Rh，Pt，Au，Ag，Co，Pd，Ni， Cr，Ge，Ru和Cu）和与反铁磁膜堆叠的铁磁膜。 反铁磁膜在其平面内取向。 此外，反铁磁膜的粒径例如为5nm以上。 可以通过用氧含量为1重量％以下的合金靶形成膜来获得反铁磁性膜。 使用这种反铁磁膜的交换耦合膜在室温和高温区域具有足够大的交换耦合力以及优异的耐腐蚀性或耐热性。 交换耦合膜设置有用于向铁磁膜施加电流的电极，并且被用作例如自旋阀型磁阻效应元件。

    Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
    10.
    发明授权
    Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus 失效

    公开(公告)号：US06636399B2

    公开(公告)日：2003-10-21

    申请号：US09927364

    申请日：2001-08-13

    申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

    发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

    IPC分类号： G11B5139

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

    摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.