发明授权
- 专利标题： Free layer for CPP GMR having iron rich NiFe
- 专利标题（中）： 自由层CPP GMR具有铁丰富的NiFe
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申请号： US10854651申请日： 2004-05-26
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公开(公告)号： US07390529B2公开(公告)日： 2008-06-24
- 发明人: Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
- 申请人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： B05D5/12
- IPC分类号： B05D5/12
摘要：
By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
公开/授权文献
- US20050264954A1 Free layer for CPP GMR having iron rich NiFe 公开/授权日：2005-12-01
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