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公开(公告)号：US07978440B2
公开(公告)日：2011-07-12
申请号：US12008151
申请日：2008-01-09
申请人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T428/115
摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.
摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。
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2.发明授权公开(公告)号：US07331100B2
公开(公告)日：2008-02-19
申请号：US10886288
申请日：2004-07-07
申请人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yue Liu , Yu-Hsia Chen , Ru-Ying Tong
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T428/115
摘要： An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabling a reduced shield-to-shield spacing.
摘要翻译： 通过首先在下屏蔽层上沉积钽层来形成改进的种子/ AFM结构。 然后将NiCr层沉积在Ta上，随后沉积一层IrMn。 后者作为AFM在40-80埃范围内有效地起作用，从而能够减少屏蔽间隔。
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公开(公告)号：US07390529B2
公开(公告)日：2008-06-24
申请号：US10854651
申请日：2004-05-26
申请人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3929 , G11B2005/3996 , H01F10/3272 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： 通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。
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公开(公告)号：US20050264954A1
公开(公告)日：2005-12-01
申请号：US10854651
申请日：2004-05-26
申请人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3929 , G11B2005/3996 , H01F10/3272 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： 通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。
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5.发明授权Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效用于制造图案化合成纵向交换偏置GMR传感器的方法公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。
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6.发明授权Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor 失效用于制造图案化合成横向交换偏置GMR传感器的方法公开(公告)号：US07152304B2
公开(公告)日：2006-12-26
申请号：US11036959
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。
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公开(公告)号：US07400475B2
公开(公告)日：2008-07-15
申请号：US11036529
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。
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8.发明授权Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor 失效用于制造图案化合成的横向交换的偏置GMR传感器的方法公开(公告)号：US07134186B2
公开(公告)日：2006-11-14
申请号：US11036922
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。
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9.发明申请Method to fabricate small dimension devices for magnetic recording applications 有权制造用于磁记录应用的小尺寸装置的方法公开(公告)号：US20110198314A1
公开(公告)日：2011-08-18
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
IPC分类号： B44C1/22
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译： 公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。 第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。 第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。 第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。 结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。 通过改变一个或多个离子束入射角来操纵侧壁角。
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10.发明授权Method to fabricate small dimension devices for magnetic recording applications 有权制造用于磁记录应用的小尺寸装置的方法公开(公告)号：US08728333B2
公开(公告)日：2014-05-20
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译： 公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。 第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。 第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。 第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。 结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。 通过改变一个或多个离子束入射角来操纵侧壁角。
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