发明授权
US07417315B2 Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging
有权
负热膨胀系统(NTE)装置用于弹性体复合材料中的TCE补偿和微电子封装中的导电弹性体互连
- 专利标题: Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging
- 专利标题(中): 负热膨胀系统(NTE)装置用于弹性体复合材料中的TCE补偿和微电子封装中的导电弹性体互连
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申请号: US10310532申请日: 2002-12-05
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公开(公告)号: US07417315B2公开(公告)日: 2008-08-26
- 发明人: Gareth Geoffrey Hougham , S. Jay Chey , James Patrick Doyle , Xiao Hu Liu , Christopher V. Jahnes , Paul Alfred Lauro , Nancy C. LaBianca , Michael J. Rooks
- 申请人: Gareth Geoffrey Hougham , S. Jay Chey , James Patrick Doyle , Xiao Hu Liu , Christopher V. Jahnes , Paul Alfred Lauro , Nancy C. LaBianca , Michael J. Rooks
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: F. Chau & Associates, LLC
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; B32B5/22 ; G02B26/00
摘要:
A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.
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