Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging
    2.
    发明授权
    Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging 有权
    负热膨胀系统(NTE)装置用于弹性体复合材料中的TCE补偿和微电子封装中的导电弹性体互连

    公开(公告)号:US07417315B2

    公开(公告)日:2008-08-26

    申请号:US10310532

    申请日:2002-12-05

    IPC分类号: H01L21/302 B32B5/22 G02B26/00

    摘要: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

    摘要翻译: 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统(NTE)装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法,该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件,其中两个双层仅在外围边缘处彼此附接,并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时,这些器件具有技术上有用的特性。

    Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging
    4.
    发明授权
    Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging 失效
    负热膨胀系统(NTE)装置用于弹性体复合材料中的TCE补偿和微电子封装中的导电弹性体互连

    公开(公告)号:US07556979B2

    公开(公告)日:2009-07-07

    申请号:US11932385

    申请日:2007-10-31

    IPC分类号: H01L21/00

    摘要: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

    摘要翻译: 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统(NTE)装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法,该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件,其中两个双层仅在外围边缘处彼此附接,并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时,这些器件具有技术上有用的特性。

    Structure and method for reducing vertical crack propagation
    10.
    发明授权
    Structure and method for reducing vertical crack propagation 有权
    减少垂直裂纹扩展的结构和方法

    公开(公告)号:US08604618B2

    公开(公告)日:2013-12-10

    申请号:US13239533

    申请日:2011-09-22

    IPC分类号: H01L23/485 H01L21/3205

    摘要: A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric insulator portion, a second metal conductor embedded within the second dielectric insulator portion, and a second nitride cap covering the second metal conductor. The first and second metal conductors form first vertically stacked conductor layers and second vertically stacked conductor layers. The first vertically stacked conductor layers are proximate the second vertically stacked conductor layers, and at least one air gap is positioned between the first vertically stacked conductor layers and the second vertically stacked conductor layers. An upper semiconductor layer covers the first vertically stacked conductor layers, the air gap and the second plurality of vertically stacked conductor layers.

    摘要翻译: 半导体器件及其制造方法包括在绝缘体上的垂直堆叠的层。 每个层包括第一介电绝缘体部分,嵌入在第一介电绝缘体部分内的第一金属导体,覆盖第一金属导体的第一氮化物帽,第二电介质绝缘体部分,嵌入在第二介电绝缘体部分内的第二金属导体 以及覆盖所述第二金属导体的第二氮化物帽。 第一和第二金属导体形成第一垂直堆叠的导体层和第二垂直堆叠的导体层。 第一垂直堆叠的导体层靠近第二垂直堆叠的导体层,并且至少一个气隙位于第一垂直堆叠的导体层和第二垂直堆叠的导体层之间。 上半导体层覆盖第一垂直堆叠的导体层,气隙和第二多个垂直堆叠的导体层。