Invention Grant
- Patent Title: Method for manufacturing substrate with cavity
- Patent Title (中): 用腔体制造衬底的方法
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Application No.: US11524403Application Date: 2006-09-21
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Publication No.: US07562446B2Publication Date: 2009-07-21
- Inventor: Hoe-Ku Jung , Myung-Sam Kang , Jung-Hyun Park
- Applicant: Hoe-Ku Jung , Myung-Sam Kang , Jung-Hyun Park
- Applicant Address: KR Suwon
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon
- Priority: KR10-2005-0088091 20050922
- Main IPC: H05K3/02
- IPC: H05K3/02 ; H05K3/10

Abstract:
A method for manufacturing a substrate having a cavity is disclosed. The method comprises: (a) forming a first circuit patter on both sides of a seed layer by use of a first dry film, the seed layer being for forming a circuit pattern on both sides; (b) laminating a second dry film on the first dry film on both sides of the seed layer, the thickness of the second dry film corresponding to the depth of the cavity to be formed; (c) laminating a dielectric layer on an area outside of where the cavity is to be formed on both sides of the seed layer, the thickness of the dielectric layer corresponding to the depth of the cavity to be formed; (d) laminating on the seed layer a copper foil laminated master having a second circuit pattern; and (e) forming the cavity by peeling off the first dry film and the second dry film after removing the seed layer. The method for manufacturing a substrate with a cavity in accordance with the present invention can improve the efficiency of a substrate manufacturing process by using both sides of a seed layer to manufacture the substrate with a cavity.
Public/Granted literature
- US20070065988A1 Method for manufacturing substrate with cavity Public/Granted day:2007-03-22
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