发明授权
- 专利标题： Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
- 专利标题（中）： 氧化铪和/或氧化锆的沉积和钝化电子结构的制造
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申请号： US11281032申请日： 2005-11-17
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公开(公告)号： US07566938B2公开(公告)日： 2009-07-28
- 发明人: Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
- 申请人： Cyril Cabral, Jr. , Alessandro C. Callegari , Michael A. Gribelyuk , Paul C. Jamison , Dianne L. Lacey , Fenton R. McFeely , Vijay Narayanan , Deborah A. Neumayer , Pushkar Ranade , Sufi Zafar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis Percello, Esq.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.