发明授权
US07663125B2 Ion beam current uniformity monitor, ion implanter and related method
有权
离子束电流均匀性监测仪,离子注入机及相关方法
- 专利标题: Ion beam current uniformity monitor, ion implanter and related method
- 专利标题(中): 离子束电流均匀性监测仪,离子注入机及相关方法
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申请号: US11692951申请日: 2007-03-29
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公开(公告)号: US07663125B2公开(公告)日: 2010-02-16
- 发明人: William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
- 申请人: William G. Callahan , Morgan D. Evans , George M. Gammel , Norman E. Hussey , Gregg A. Norris , Joseph C. Olson
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J37/08
- IPC分类号: H01J37/08 ; G21K5/10
摘要:
An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.
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