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7 条记录 (耗时 0.013 秒)

    Method and apparatus for low energy ion implantation
    1.
    发明授权
    Method and apparatus for low energy ion implantation 失效
    低能离子注入的方法和装置

    公开(公告)号：US06528804B1

    公开(公告)日：2003-03-04

    申请号：US09524170

    申请日：2000-03-13

    申请人： Philip Sullivan ,  George M. Gammel ,  Damian F. Brennan

    发明人： Philip Sullivan ,  George M. Gammel ,  Damian F. Brennan

    IPC分类号： H01J3708

    CPC分类号： H01J37/3171 ,  H01J2237/0475

    摘要： An ion implanter for low energy ion implantation includes an ion beam generator, a older for supporting a workpiece, such as a semiconductor wafer, and a voltage source electrically connected to the workpiece. The ion beam generator includes an ion source for generating ions and an extraction electrode having an extraction voltage applied thereto for accelerating the ions to form an ion beam. The voltage source applies to the workpiece a bias voltage that is of opposite polarity and smaller magnitude than the extraction voltage. The ions in the ion beam are implanted in the workpiece with an energy that is a function of the difference between the extraction voltage and the bias voltage.

    摘要翻译： 用于低能量离子注入的离子注入机包括离子束发生器，旧的用于支撑诸如半导体晶片的工件，以及电连接到工件的电压源。 离子束发生器包括用于产生离子的离子源和施加有提取电压的提取电极，用于加速离子以形成离子束。 电压源对工件施加与提取电压相反的极性和更小的偏置电压。 离子束中的离子以能够提取电压和偏置电压之差的能量注入到工件中。

    Method and apparatus for measuring the momentum, energy, power, and power density profile of intense particle beams
    2.
    发明授权
    Method and apparatus for measuring the momentum, energy, power, and power density profile of intense particle beams 失效
    用于测量强粒子束的动量，能量，功率和功率密度分布的方法和装置

    公开(公告)号：US5153430A

    公开(公告)日：1992-10-06

    申请号：US767604

    申请日：1991-09-30

    申请人： George M. Gammel ,  Henry W. Kugel

    发明人： George M. Gammel ,  Henry W. Kugel

    IPC分类号： G01T5/00

    CPC分类号： G01T5/00

    摘要： A method and apparatus for determining the power, momentum, energy, and power density profile of high momentum mass flow. Small probe projectiles of appropriate size, shape and composition are propelled through an intense particle beam at equal intervals along an axis perpendicular to the beam direction. Probe projectiles are deflected by collisions with beam particles. The net beam-induced deflection of each projectile is measured after it passes through the intense particle beam into an array of suitable detectors.

    摘要翻译： 一种用于确定高动量质量流的功率，动量，能量和功率密度分布的方法和装置。 适当尺寸，形状和组成的小探针弹射沿着垂直于光束方向的轴线以相等的间隔被推动通过强烈的粒子束。 探头射弹通过与束粒子碰撞而偏转。 每个射弹的净光束引起的偏转在通过强烈的粒子束进入合适的探测器的阵列之后被测量。

    Wafer charge monitoring
    4.
    发明授权
    Wafer charge monitoring 有权
    晶圆充电监控

    公开(公告)号：US07476877B2

    公开(公告)日：2009-01-13

    申请号：US11353820

    申请日：2006-02-14

    申请人： Russell J. Low ,  George M. Gammel ,  Peter F. Kurunczi ,  Eric Cobb

    发明人： Russell J. Low ,  George M. Gammel ,  Peter F. Kurunczi ,  Eric Cobb

    IPC分类号： H01J37/30

    CPC分类号： H01J37/3171 ,  H01J2237/24405 ,  H01J2237/31703

    摘要： A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.

    摘要翻译： 电荷监测系统可以包括具有被配置为在其上接受晶片的表面的压板和相对于压板设置的电荷监测器，使得离子束同时撞击电荷监测器的一部分和晶片的一部分。 电荷监视器被配置为当离子束同时撞击电荷监视器的部分和晶片的部分时，提供表示晶片表面上的电荷的电荷监测信号。 电荷监测信号至少部分地取决于离子束的束电位。

    PLASMA ION PROCESS UNIFORMITY MONITOR
    6.
    发明申请
    PLASMA ION PROCESS UNIFORMITY MONITOR 审中-公开
    等离子体过程均匀监测

    公开(公告)号：US20100159120A1

    公开(公告)日：2010-06-24

    申请号：US12341574

    申请日：2008-12-22

    申请人： Joseph P. Dzengeleski ,  George M. Gammel ,  Bernard G. Lindsay ,  Vikram Singh

    发明人： Joseph P. Dzengeleski ,  George M. Gammel ,  Bernard G. Lindsay ,  Vikram Singh

    IPC分类号： C23C14/48 ,  B05C11/00

    CPC分类号： H01J37/32935

    摘要： An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

    摘要翻译： 离子均匀性监测装置位于等离子体处理室内，并且包括位于室内的工件上方并远离工件的多个传感器。 传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。 每个传感器输出与检测到的二次电子成比例的电流信号。 电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。 在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征，并且可以在原位和在线等离子体处理期间进行。