Invention Grant
US07767255B2 Information storage medium with laterally magnetised dot array, and process for producing said medium
有权
具有横向磁化点阵列的信息存储介质，以及用于产生所述介质的工艺
- Patent Title: Information storage medium with laterally magnetised dot array, and process for producing said medium
- Patent Title (中): 具有横向磁化点阵列的信息存储介质，以及用于产生所述介质的工艺
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Application No.: US11602628Application Date: 2006-11-20
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Publication No.: US07767255B2Publication Date: 2010-08-03
- Inventor: Bernard Rodmacq , Stéphane Landis , Bernard Dieny
- Applicant: Bernard Rodmacq , Stéphane Landis , Bernard Dieny
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Nixon Peabody LLP
- Priority: FR0108869 20010704
- Main IPC: B05D5/12
- IPC: B05D5/12 ; G11B5/33 ; G11B5/64 ; G11B11/00 ; G11B21/10 ; G11B3/70 ; G11B7/24
Abstract:
An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium is disclosed.Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives.
Public/Granted literature
- US20070065572A1 Information storage medium with laterally magnetised dot array, and process for producing said medium Public/Granted day:2007-03-22
Information query
