发明授权
- 专利标题: Image sensor having an RPO layer containing nitrogen
- 专利标题(中): 具有含有氮的RPO层的图像传感器
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申请号: US11548189申请日: 2006-10-10
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公开(公告)号: US07772625B2公开(公告)日: 2010-08-10
- 发明人: Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
- 申请人: Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L31/09
- IPC分类号: H01L31/09
摘要:
A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
公开/授权文献
- US20080083938A1 IMAGE SENSORS AND METHODS OF FABRICATING IMAGE SENSORS 公开/授权日:2008-04-10