公开(公告)号：US20060057759A1

公开(公告)日：2006-03-16

申请号：US10944243

申请日：2004-09-16

申请人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

发明人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14687

摘要： A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.

摘要翻译： 公开了一种用于与至少一个晶体管器件一起形成具有改进的灵敏度的至少一个图像传感器的方法。 该方法包括在衬底上形成晶体管器件的至少一部分，通过将与晶体管器件分离的预定区域掺杂最小预定距离来形成图像传感器，形成用于覆盖晶体管器件的接触区域的蚀刻停止层 在所述预定区域中去除所述蚀刻停止层的至少一部分以暴露所述图像传感器，以及通过至少一个透明保护层覆盖所述图像传感器和所述晶体管器件。

公开(公告)号：US20050073800A1

公开(公告)日：2005-04-07

申请号：US10678236

申请日：2003-10-03

申请人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

发明人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

IPC分类号： H01G4/005 ,  H01G4/06 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30 ,  H01G4/33 ,  H01G4/38 ,  H01L21/02 ,  H01L23/522

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/232 ,  H01G4/30 ,  H01G4/38 ,  H01L23/5223 ,  H01L28/82 ,  H01L2924/0002 ,  Y10T29/435 ,  H01L2924/00

摘要： A capacitor having an electrically/conductive plate, an electrically conductive segmented plate defining a first plurality of electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segmented plate, at least one electrically conductive interconnect coupling each of the plate segments of one of the first and second plurality of plate segments to the plate, and a second capacitor dielectric disposed between the plate segments.

摘要翻译： 具有电/导电板的电容器，限定第一多个导电板段和第二多个导电板段的导电分段板，设置在板和分段板之间的第一电容器电介质，至少一个电 所述导电互连将所述第一和第二多个板段中的一个的每个板段耦合到所述板，以及设置在所述板段之间的第二电容器电介质。

公开(公告)号：US07233050B2

公开(公告)日：2007-06-19

申请号：US11419866

申请日：2006-05-23

申请人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

发明人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

IPC分类号： H01L31/0203

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14687

摘要： A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.

摘要翻译： 公开了一种用于与至少一个晶体管器件一起形成具有改进的灵敏度的至少一个图像传感器的方法。 该方法包括在衬底上形成晶体管器件的至少一部分，通过将与晶体管器件分离的预定区域掺杂最小预定距离来形成图像传感器，形成用于覆盖晶体管器件的接触区域的蚀刻停止层 在所述预定区域中去除所述蚀刻停止层的至少一部分以暴露所述图像传感器，以及通过至少一个透明保护层覆盖所述图像传感器和所述晶体管器件。

公开(公告)号：US07772625B2

公开(公告)日：2010-08-10

申请号：US11548189

申请日：2006-10-10

申请人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

发明人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

IPC分类号： H01L31/09

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

摘要翻译： 半导体结构包括形成在衬底上的晶体管。 晶体管包括晶体管栅极和至少一个源极/漏极区域。 半导体结构包括耦合到晶体管的预定区域。 半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

公开(公告)号：US20060197171A1

公开(公告)日：2006-09-07

申请号：US11419866

申请日：2006-05-23

申请人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

发明人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

IPC分类号： H01L21/00 ,  H01L31/0203

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14687

摘要： A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.

摘要翻译： 公开了一种用于与至少一个晶体管器件一起形成具有改进的灵敏度的至少一个图像传感器的方法。 该方法包括在衬底上形成晶体管器件的至少一部分，通过将与晶体管器件分离的预定区域掺杂最小预定距离来形成图像传感器，形成用于覆盖晶体管器件的接触区域的蚀刻停止层 在所述预定区域中去除所述蚀刻停止层的至少一部分以暴露所述图像传感器，以及通过至少一个透明保护层覆盖所述图像传感器和所述晶体管器件。

公开(公告)号：US20080083938A1

公开(公告)日：2008-04-10

申请号：US11548189

申请日：2006-10-10

申请人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

发明人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

IPC分类号： H01L31/06 ,  H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

摘要翻译： 半导体结构包括形成在衬底上的晶体管。 晶体管包括晶体管栅极和至少一个源极/漏极区域。 半导体结构包括耦合到晶体管的预定区域。 半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

公开(公告)号：US07071019B2

公开(公告)日：2006-07-04

申请号：US10944243

申请日：2004-09-16

申请人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

发明人： Wei Zhang ,  Chian-Liang Lin ,  Jung-Chen Yang ,  Chia-Chun Hung ,  Shih-Min Liu

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14687

摘要： A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.

公开(公告)号：US06934143B2

公开(公告)日：2005-08-23

申请号：US10678236

申请日：2003-10-03

申请人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

发明人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

IPC分类号： H01G4/005 ,  H01G4/06 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30 ,  H01G4/33 ,  H01G4/38 ,  H01L21/02 ,  H01L23/522

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/232 ,  H01G4/30 ,  H01G4/38 ,  H01L23/5223 ,  H01L28/82 ,  H01L2924/0002 ,  Y10T29/435 ,  H01L2924/00

摘要： A capacitor having an electrically/conductive plate, an electrically conductive segmented electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segment plate, at least one electrically conductive interconnect coupling each of the plate segment of one of the first and second plurality of plate segments to the plate, and a second capacitor dieletric disposed between the plate segments.

摘要翻译： 具有电/导电板的电容器，导电分段的导电板段和第二多个导电板段，设置在板和段板之间的第一电容器电介质，至少一个导电互连， 所述第一和第二多个板段中的一个的板段到所述板，以及设置在所述板段之间的第二电容器。