公开(公告)号：US20080083938A1

公开(公告)日：2008-04-10

申请号：US11548189

申请日：2006-10-10

申请人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

发明人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

IPC分类号： H01L31/06 ,  H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

摘要翻译： 半导体结构包括形成在衬底上的晶体管。 晶体管包括晶体管栅极和至少一个源极/漏极区域。 半导体结构包括耦合到晶体管的预定区域。 半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

公开(公告)号：US06595841B2

公开(公告)日：2003-07-22

申请号：US10029466

申请日：2001-12-20

申请人： Kevin Lai ,  Yao-Hsiang Liang

发明人： Kevin Lai ,  Yao-Hsiang Liang

IPC分类号： B24B4106

CPC分类号： H01L21/67326 ,  B24B37/345 ,  H01L21/67757 ,  Y10S269/903 ,  Y10S414/14

摘要： A cassette tub for holding at least one wafer cassette in a tilted position for accessing by a robot blade by utilizing a cassette tub pin assembly to ensure the tilt angle of the wafer cassette is described. The cassette tub is filled with water such that wafers during a chemical mechanical polishing process may be stored therein without any residual slurry solution solidified on the surface of the wafer, and thus eliminating the generation of any contaminating particles or abrasive particles which may cause severe scratching in a subsequent chemical mechanical polishing process. The cassette tub pin assembly is securely mounted to a mounting reel in the cassette tub such that the angle of the wafer cassette is ensured.

摘要翻译： 一种盒式存储器，用于将至少一个晶片盒保持在倾斜位置，以通过利用盒式滚筒销组件来利用机器人刀片进行访问，以确保晶片盒的倾斜角度。 盒式磁带桶充满水，使得在化学机械抛光过程中的晶片可以被储存在其中，而没有任何残留的浆液溶液固化在晶片的表面上，从而消除可能引起严重刮伤的任何污染颗粒或磨料颗粒的产生 在随后的化学机械抛光过程中。 盒式存储器插座组件牢固地安装到盒式磁盘桶中的安装卷轴上，从而确保了晶片盒的角度。

公开(公告)号：US08673765B2

公开(公告)日：2014-03-18

申请号：US13486006

申请日：2012-06-01

申请人： Hung-Chih Wang ,  Wei-Rong Chen ,  Yao Hsiang Liang ,  Chen-Kuang Lien

发明人： Hung-Chih Wang ,  Wei-Rong Chen ,  Yao Hsiang Liang ,  Chen-Kuang Lien

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/0276 ,  H01L21/31144

摘要： Methods and apparatus are disclosed for the back end of line process for fabrication of integrated circuits (ICs). The inter-metal dielectric (IMD) layer between two metal layers may comprise an etching stop layer over a metal layer, a low-k dielectric layer over the etching stop layer, a dielectric hard mask layer over the low-k dielectric layer, an nitrogen free anti-reflection layer (NFARL) over the dielectric hard mask layer, and a metal-hard-mask (MHM) layer of a thickness in a range from about 180 Å to about 360 Å over the NFARL. The MHM layer thickness is optimized at the range from about 180 Å to about 360 Å to reduce the Cu pits while avoiding the photo overlay shifting issue.

摘要翻译： 公开了用于制造集成电路（IC）的线路工艺的后端的方法和装置。 两个金属层之间的金属间电介质（IMD）层可以包括金属层上的蚀刻停止层，蚀刻停止层上的低k电介质层，低k电介质层上的电介质硬掩模层， 通过NFARL，在介电硬掩模层上的无氮抗反射层（NFARL）和厚度约为180至约360埃的金属 - 硬掩模（MHM）层。 MHM层厚度在约180埃至约360埃的范围内被优化，以减少Cu坑，同时避免了照片重叠移位问题。

公开(公告)号：US06394886B1

公开(公告)日：2002-05-28

申请号：US09975539

申请日：2001-10-10

申请人： Wen-Ten Chen ,  Yao-Hsiang Liang ,  Chih-I Peng ,  Yu-Chia Chang

发明人： Wen-Ten Chen ,  Yao-Hsiang Liang ,  Chih-I Peng ,  Yu-Chia Chang

IPC分类号： B24B4702

CPC分类号： B24B53/017 ,  B24B53/12

摘要： A conformal disk holder for holding a rotating disk against a surface of a polishing pad is described. The conformal disk holder can be used for any polishing apparatus, but is particularly suited for use in a CMP pad conditioning disk. The conformal disk holder is constructed by a cover member, a flexural plate member and a base member. The flexural plate member has a center protrusion with a downwardly facing convex surface for intimately engaging an upwardly facing concave surface on a center protrusion of the base member. The intimate engagement between the convex surface and the concave surface allows at least a 5° tilt of the base member from a horizontal plane, and preferably allows a tilt between about 5° and about 30°.

摘要翻译： 描述了用于将旋转盘保持抵靠抛光垫的表面的保形盘保持器。 共形盘保持器可用于任何抛光装置，但特别适用于CMP垫调节盘。 共形盘保持器由盖构件，弯曲板构件和基座构件构成。 弯曲板构件具有中心突起，其具有向下的凸起表面，用于紧密接合基座构件的中心突出部上的面向上的凹面。 凸表面和凹面之间的紧密接合允许基部构件从水平面至少5°倾斜，并且优选地允许约5°至约30°之间的倾斜。

公开(公告)号：US06672950B2

公开(公告)日：2004-01-06

申请号：US10062965

申请日：2002-01-30

申请人： Chih-I Peng ,  Wen-Ten Chen ,  Yu-Chia Chang ,  Yao-Hsiang Liang

发明人： Chih-I Peng ,  Wen-Ten Chen ,  Yu-Chia Chang ,  Yao-Hsiang Liang

IPC分类号： B24B5504

CPC分类号： B24B37/34 ,  B24B53/017 ,  B24B55/12

摘要： The present invention discloses a contamination prevention system and method of use having a contamination prevention shield that cooperates with a high pressure rinse apparatus to prevent contamination of particles within a CMP apparatus. The contamination prevention shield has a cleaning cup, two vertical side shields, a front vertical shield, and a floor that cooperate to prevent leakage of fluid splattered during a high pressure rinse of the CMP apparatus and an interior portion of a CMP apparatus housing; and a high pressure rinse apparatus connected to the contamination prevention shield having a conduit with at least one nozzle for dispensing cleaning fluid during a high pressure rinse cycle. Additionally, a plurality of contamination prevention shields may be used in combination with the high pressure rinse apparatus to further prevent contamination of an interior portion of the housing and the CMP apparatus.

摘要翻译： 本发明公开了一种防污染系统和使用方法，其具有与高压冲洗装置配合的防污染屏蔽物，以防止CMP装置内的颗粒污染。 防污染屏蔽件具有清洁杯，两个垂直侧屏蔽，前垂直屏蔽和底板，其配合以防止在CMP设备的高压冲洗期间溅射的流体的泄漏和CMP设备壳体的内部; 以及连接到防污染屏蔽件的高压冲洗装置，其具有在高压漂洗循环期间具有用于分配清洁流体的至少一个喷嘴的导管。 另外，多个防污屏蔽可以与高压冲洗装置组合使用，以进一步防止外壳和CMP装置的内部部分的污染。

公开(公告)号：US06561744B2

公开(公告)日：2003-05-13

申请号：US09927617

申请日：2001-08-10

申请人： Yao Hsiang Liang

发明人： Yao Hsiang Liang

IPC分类号： B65G4907

CPC分类号： H01L21/6838 ,  Y10S414/141

摘要： A wafer blade for picking up wafers immersed in a wafer tank and a method for using the wafer blade are described. The wafer blade is constructed by a blade body of generally elongated rectangular shape that has a wafer pick-up side and a backside. The wafer pick-up side of the blade body has a recessed vacuum port for contacting a wafer with a vacuum passageway in the blade body connected to an external vacuum source. The backside of the blade body has at least two recessed slots that are open to an edge of the blade body, wherein each has a width of at least 5 mm and a length of at least 5 cm for providing ventilation and preventing the backside of the blade body from sticking to a wafer by capillary reaction caused by water entrapped in between the wafer and the backside of the blade body.

公开(公告)号：US07772625B2

公开(公告)日：2010-08-10

申请号：US11548189

申请日：2006-10-10

申请人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

发明人： Yao Hsiang Liang ,  Wen-Kung Cheng ,  Chen-Peng Fan ,  Ming-Hsien Chen ,  Richard Chen ,  Jung-Chen Yang ,  Wen-Yu Ho ,  Chao-Keng Li ,  Yong-Sin Chang ,  Labo Chang

IPC分类号： H01L31/09

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

摘要翻译： 半导体结构包括形成在衬底上的晶体管。 晶体管包括晶体管栅极和至少一个源极/漏极区域。 半导体结构包括耦合到晶体管的预定区域。 半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

公开(公告)号：US08742540B2

公开(公告)日：2014-06-03

申请号：US11216715

申请日：2005-08-31

申请人： Yao Hsiang Liang

发明人： Yao Hsiang Liang

IPC分类号： H01L21/02

CPC分类号： H01L28/40 ,  H01L28/60

摘要： A metal-insulator-metal (MIM) capacitor and a method for forming the same are provided. The MIM capacitor includes an insulator on a bottom metal plate, a top metal plate on the insulator, a dielectric layer on the top metal plate and on at least sidewalls of the top metal plate and the insulator, and an anti-reflective coating (ARC) layer over the top metal plate and the bottom metal plate. The dielectric layer preferably extends on an exposed portion of the bottom metal plate not covered by the top metal plate and the insulator.

摘要翻译： 提供金属 - 绝缘体 - 金属（MIM）电容器及其形成方法。 MIM电容器包括在底部金属板上的绝缘体，绝缘体上的顶部金属板，顶部金属板上的介电层，以及顶部金属板和绝缘体的至少侧壁，以及抗反射涂层（ARC ）层在顶部金属板和底部金属板上。 电介质层优选在未被顶部金属板和绝缘体覆盖的底部金属板的暴露部分上延伸。

公开(公告)号：US20130320539A1

公开(公告)日：2013-12-05

申请号：US13486006

申请日：2012-06-01

申请人： Hung-Chih Wang ,  Wei-Rong Chen ,  Yao Hsiang Liang ,  Chen-Kuang Lien

发明人： Hung-Chih Wang ,  Wei-Rong Chen ,  Yao Hsiang Liang ,  Chen-Kuang Lien

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/0276 ,  H01L21/31144

摘要： Methods and apparatus are disclosed for the back end of line process for fabrication of integrated circuits (ICs). The inter-metal dielectric (IMD) layer between two metal layers may comprise an etching stop layer over a metal layer, a low-k dielectric layer over the etching stop layer, a dielectric hard mask layer over the low-k dielectric layer, an nitrogen free anti-reflection layer (NFARL) over the dielectric hard mask layer, and a metal-hard-mask (MHM) layer of a thickness in a range from about 180 Å to about 360 Å over the NFARL. The MHM layer thickness is optimized at the range from about 180 Å to about 360 Å to reduce the Cu pits while avoiding the photo overlay shifting issue.

摘要翻译： 公开了用于制造集成电路（IC）的线路工艺的后端的方法和装置。 两个金属层之间的金属间电介质（IMD）层可以包括金属层上的蚀刻停止层，蚀刻停止层上的低k电介质层，低k电介质层上的电介质硬掩模层， 通过NFARL，在介电硬掩模层上的无氮抗反射层（NFARL）和厚度约为180至约360埃的金属 - 硬掩模（MHM）层。 MHM层厚度在约180埃至约360埃的范围内被优化，以减少Cu坑，同时避免了照片重叠移位问题。

公开(公告)号：US06783441B2

公开(公告)日：2004-08-31

申请号：US09928057

申请日：2001-08-10

申请人： Yao Hsiang Liang ,  Wen-Ten Chan

发明人： Yao Hsiang Liang ,  Wen-Ten Chan

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B41/04

摘要： An apparatus and a method for transferring a rotational torque from a hub frame to a one-piece hub shaft onto which a pad conditioning disc is attached are described. The apparatus is a one-piece hub shaft for mounting into a hub-frame. To provide a great improvement over the conventional design wherein a hub spacer is mounted to a hub shaft by screw means, the present invention conditioning head is assembled together by frictionally engaging a key and a flat surface on the hub shaft to a slot opening on the hub frame such that any catastrophic failure due to a screw breakage can be avoided. The present invention novel frictional engagement further provides a more uniform torque transfer between the two components.

摘要翻译： 描述了一种用于将旋转扭矩从轮毂框架转移到连接有垫片调节盘的单件轮毂轴的装置和方法。 该装置是用于安装到轮毂架中的一体式轮毂轴。 为了提供比通过螺钉装置将轮毂间隔件安装到轮毂轴的传统设计更大的改进，本发明的调节头通过将轮毂轴上的钥匙和平坦表面摩擦接合到所述轮毂轴上的槽口而组装在一起 轮毂框架，从而可以避免由于螺钉破损而导致的任何灾难性故障。 本发明的新颖的摩擦接合进一步提供了两个部件之间更均匀的转矩传递。